"7" . "Calta, Pavel" . . "211" . . "Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction" . "23640" . "Pru\u0161\u00E1kov\u00E1, Lucie" . "Netrvalov\u00E1, Marie" . "Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction"@en . "RIV/49777513:23640/14:43923317" . . "Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction" . . . "22774" . . "Agbo, Solomon Nwabueze" . . . . "DE - Spolkov\u00E1 republika N\u011Bmecko" . . . . "Vavru\u0148kov\u00E1, Veronika" . "6"^^ . . . . . . "Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction"@en . "Physica Status Solidi A" . . "6"^^ . "We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasma-enhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 \u00B0C annealing temperature, independent of the a-Si:H sublayer thickness."@en . "RIV/49777513:23640/14:43923317!RIV15-MSM-23640___" . "P(ED2.1.00/03.0088)" . "\u0160utta, Pavol" . "X-ray diffraction; Raman spectroscopy; nanostructures; nanocrystalline silicon; multilayers; FTIR"@en . "1862-6300" . . . . "7"^^ . "We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasma-enhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 \u00B0C annealing temperature, independent of the a-Si:H sublayer thickness." . . . "10.1002/pssa.201330231" . "000339484000006" . "[321DEED29801]" .