. . . "Netrvalov\u00E1, Marie" . "Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications" . "Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications" . . "Bratislava" . . . . "2"^^ . . "2012-05-14+02:00"^^ . "Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications"@en . "Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications"@en . . . . . . . . "978-80-223-3212-5" . "Univerzita Komensk\u00E9ho v Bratislave" . "23640" . "RIV/49777513:23640/12:43916611!RIV13-MSM-23640___" . . "4"^^ . "[E7E72233C4A9]" . "XRD; optical properties; annealing; Si nanostructures; PECVD; a-Si:H/SiO2 multilayers"@en . "4"^^ . . "In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 \u00B0C to initialize recrystallization and formation of Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain and disordered amorphous regions. The XRD study shows the presence of nanocrystallites of silicon and their size can be precisely controlled by adjusting the thickness of a-Si:H layers." . "RIV/49777513:23640/12:43916611" . "Progress in Applied Surface, Inteface and Thin Film Science 2012, SURFINT -SREN III" . "142920" . "\u0160utta, Pavol" . . "Calta, Pavel" . . "Florence, Italie" . . . "Pru\u0161\u00E1kov\u00E1, Lucie" . "In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 \u00B0C to initialize recrystallization and formation of Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain and disordered amorphous regions. The XRD study shows the presence of nanocrystallites of silicon and their size can be precisely controlled by adjusting the thickness of a-Si:H layers."@en . . . "P(ED2.1.00/03.0088)" .