"In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms"@en . . . . . "Netrvalov\u00E1, Marie" . . "10.1016/j.vacuum.2011.07.064" . . "P(1M06031), P(ED2.1.00/03.0088)" . "6" . . . "Tvaro\u017Eek, Vladim\u00EDr" . "23640" . "0042-207X" . "5"^^ . "In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms" . . . "4"^^ . "optical properties; structural properies; ZnO:Ga, oblique sputttering"@en . "142809" . . "In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms"@en . . . . "RIV/49777513:23640/12:43897333" . "3"^^ . "[C6A7A2ED576D]" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "Zinc oxide ?lms doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga2O3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder e horizontal, and at 60 and 80\u00B0 to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200\u00B0C. XRD, optical and electrical experiments indicated that the ?lms are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 percent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80\u00B0 to the substrate holder was one order lower than the horizontally positioned samples. No signi?cant changes were observed in case of optical properties of the ?lms in dependence on the tilt-angle." . . "Vacuum" . . "Novotn\u00FD, Ivan" . "In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms" . . "Pru\u0161\u00E1kov\u00E1, Lucie" . . "86" . "\u0160utta, Pavol" . . "Zinc oxide ?lms doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga2O3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder e horizontal, and at 60 and 80\u00B0 to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200\u00B0C. XRD, optical and electrical experiments indicated that the ?lms are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 percent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80\u00B0 to the substrate holder was one order lower than the horizontally positioned samples. No signi?cant changes were observed in case of optical properties of the ?lms in dependence on the tilt-angle."@en . . "RIV/49777513:23640/12:43897333!RIV13-MSM-23640___" .