"P(1M06031), S" . . "Ni\u0161, Serbia" . . "4"^^ . "Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications"@en . . . . "Tvaro\u017Eek, Vladim\u00EDr" . . . . . "Ni\u0161" . . "Netrvalov\u00E1, Marie" . "Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications" . . "Pru\u0161\u00E1kov\u00E1, Lucie" . "23640" . "Proceedings 27th International Conference on Microelectronics" . "Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications"@en . "2010-01-01+01:00"^^ . "3"^^ . "Influence of Different Dopants on Physical Properties of ZnO for Photovoltaic Applications" . "\u0160utta, Pavol" . . "ZnO; dopants; optical properties; structure"@en . . . "978-1-4244-7198-0" . "RIV/49777513:23640/10:00503377!RIV11-MSM-23640___" . . "[FA213F4288A9]" . "RIV/49777513:23640/10:00503377" . "The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed." . . "Novotn\u00FD, Ivan" . . . "Electron Devices Society of the Institute of Electrical and Electronics Engineers, inc." . "5"^^ . . "263605" . "The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed."@en . .