"Netrvalov\u00E1, Marie" . "Vavru\u0148kov\u00E1, Veronika" . "Study of Re-crystallization Processes in Amorphous Silicon Films"@en . . "Proceedings 27th International Conference on Microelectronics" . "Study of Re-crystallization Processes in Amorphous Silicon Films" . "RIV/49777513:23640/10:00503315!RIV11-MSM-23640___" . "Electron Devices Society of the Institute of Electrical and Electronics Engineers" . "23640" . "Ni\u0161, Serbia" . "Ni\u0161" . . "290825" . . "4"^^ . "\u0160utta, Pavol" . . . "[62F65EC0F200]" . . "4"^^ . "Study of Re-crystallization Processes in Amorphous Silicon Films"@en . "Pru\u0161\u00E1kov\u00E1, Lucie" . "M\u00FCllerov\u00E1, Jarmila" . . "RIV/49777513:23640/10:00503315" . . "Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 \u00B0C to 620 \u00B0C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data." . "2010-01-01+01:00"^^ . "P(1M06031), S" . . "re-crystallization; amorphous silicon (a-Si)"@en . "978-1-4244-7198-0" . "5"^^ . . "Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 \u00B0C to 620 \u00B0C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data."@en . . . "Study of Re-crystallization Processes in Amorphous Silicon Films" . . . . . . . .