. "Dagamseh, A.M.K." . "0040-6090" . "23640" . "516" . . "[C7399D705B31]" . . "RIV/49777513:23640/08:00501212" . . "Vet, B." . "7"^^ . "21" . "Zeman, Miro" . "Zinc oxide; sputtering; XRD; amorphous silicon solar cells"@en . "5"^^ . "ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells"@en . "ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells" . . "\u0160utta, Pavol" . . . "Thin Solid Films" . . "407185" . "RIV/49777513:23640/08:00501212!RIV11-MSM-23640___" . "ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells"@en . "000259727900096" . "1"^^ . "The substrate temperature significantly affects the crystallite size, the effect of the rf. power and pressure on the crystallite size is less pronounced. The largest crystallite size of 300 nm was determined in films deposited in the range of 75 \u00B0C to 100 \u00B0C. The increasing substrate temperature enhances the doping efficiency resulting in films with a lower resistivity and wider optical gap. The use of the optimal sputtering conditions (75 oC to 100 oC, 1 ?bar and 800 W) for depositing ZnO:Al back reflector in a-Si:H solar cells resulted in an S-shaped J-V curve and a low fill factor. By using an increased pressure of 25 \u03BCbar during sputtering of the ZnO:Al a relative increase of 10 % in the efficiency was achieved in comparison to the cell without the ZnO:Al. The improvement resulted mainly from an enhancement of ~ 1.3 mA/cm2 in the short circuit current." . "NL - Nizozemsko" . "P(1M06031)" . . . . . "Tichelaar, Frans D." . . . "The substrate temperature significantly affects the crystallite size, the effect of the rf. power and pressure on the crystallite size is less pronounced. The largest crystallite size of 300 nm was determined in films deposited in the range of 75 \u00B0C to 100 \u00B0C. The increasing substrate temperature enhances the doping efficiency resulting in films with a lower resistivity and wider optical gap. The use of the optimal sputtering conditions (75 oC to 100 oC, 1 ?bar and 800 W) for depositing ZnO:Al back reflector in a-Si:H solar cells resulted in an S-shaped J-V curve and a low fill factor. By using an increased pressure of 25 \u03BCbar during sputtering of the ZnO:Al a relative increase of 10 % in the efficiency was achieved in comparison to the cell without the ZnO:Al. The improvement resulted mainly from an enhancement of ~ 1.3 mA/cm2 in the short circuit current."@en . "ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells" . . .