"Transparent and conductive ZnO:Al prepared by Rf diode sputtering" . . . "RIV/49777513:23640/08:00500271!RIV10-MSM-23640___" . "RIV/49777513:23640/08:00500271" . "Shtereva, K." . "IOP PUBLISHING LTD" . "Tvaro\u017Eek, Vladim\u00EDr" . . "Transparent and conductive ZnO:Al prepared by Rf diode sputtering" . "\u0160utta, Pavol" . "ZnO:Al; structure; optical properties; electrical properties"@en . "Netrvalov\u00E1, Marie" . . . . . "1742-6588" . . "Journal of Physics: Conference Series" . . . "2"^^ . "000275655200299" . . . "P(1M06031)" . "Novotn\u00FD, Ivan" . . "23640" . "400482" . . . . "High transparent and conductive ZnO:Al thin film were prepared by RF diode sputtering from ZnO + 2 wt. % Al2O3 target on Corning glass substrates. The RF power and the substrate temperature modified their structure and surface morfology, electrical and optical parameters. The XRD patterns reveal a preferential c-axis orientation. The developed ZnO:Ale have a low electrical resistivity and high optical transmittance in the visible region. The direct optical band gap increases with the increasing carrier concentration." . "6"^^ . "[A48D2043C80C]" . "BRISTOL" . . "Transparent and conductive ZnO:Al prepared by Rf diode sputtering"@en . "Transparent and conductive ZnO:Al prepared by Rf diode sputtering"@en . "High transparent and conductive ZnO:Al thin film were prepared by RF diode sputtering from ZnO + 2 wt. % Al2O3 target on Corning glass substrates. The RF power and the substrate temperature modified their structure and surface morfology, electrical and optical parameters. The XRD patterns reveal a preferential c-axis orientation. The developed ZnO:Ale have a low electrical resistivity and high optical transmittance in the visible region. The direct optical band gap increases with the increasing carrier concentration."@en . "Stockholm, Sweden" . "Flickyngerov\u00E1, So\u0148a" . "2007-06-06+02:00"^^ . . "4"^^ .