. "RIV/49777513:23640/03:00000163!RIV/2004/MSM/236404/N" . "8"^^ . . . "\u0160est\u00E1k, Jaroslav" . "23640" . "Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs" . "A new mechanism for dislocation elimination during the growth is proposed to explain the configuration of thermal gradient is illustrated for various types of crucible rotation, which is important for the creation of dislocations, which decreases along the grown axis of crystal." . "RIV/49777513:23640/03:00000163" . "Neuveden" . . "\u0160t\u011Bp\u00E1nek, B." . . "1388-6150" . "Mare\u0161, J. J." . . . "A new mechanism for dislocation elimination during the growth is proposed to explain the configuration of thermal gradient is illustrated for various types of crucible rotation, which is important for the creation of dislocations, which decreases along the grown axis of crystal."@en . "[82F6DE73F479]" . "Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs"@en . . "630885" . "165-172" . . "0" . . . . . . "doping;gallium antimonide;low dislocation;density;single crystal growth;thermal gradients"@en . . . . . "\u0160est\u00E1kov\u00E1, V." . "Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs" . "HU - Ma\u010Farsko" . "1"^^ . "Journal of Thermal Analysis and Calorimetry" . "0"^^ . "4"^^ . "Z(MSM 230000009)" . "0"^^ . "Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs"@en .