. "23520" . . . "Rus\u0148\u00E1k, Karel" . . "Akademie v\u011Bd \u010Cesk\u00E9 republiky" . . . "CNx films were deposited on Si(100) substrates at a substrate temperature of 600 C using DC magnetron sputtering of a high-purity graphite target in pure nitrogen. The film characteristics were primarily controlled by the pressure, p, (0.05 to 5 Pa), thedischarge current in the magnetron target, Im, (0.5 to 3 A), and the RF-induced negative substrate bias voltage, Ub, (-300 to -1200 V). The films were found to be amorphous, and they possessed the N/C atomic concentration ratio up to 0.35, the hardness uto 40 GPa, the elastic recovery up to 85%, and good adhesion and promising tribological properties. A complex relationship between the process parameters and the film characteristics was investigated on the basis of correlations between the process parameters and the respective internal plasma parameters, such as ion bombardment characteristics and the densities of N atoms and CN radicals in front of the substrate."@en . . "[57A62C4CE58F]" . "1497" . . . "P(GV106/96/K245), P(VS96059), Z(MSM 235200002)" . "Reactive magnetron sputtering of carbon nitride films: characterization of ion bombardment and optical emission spectroscopy in deposition zone"@en . "RIV/49777513:23520/99:00042299" . . "80-902724-0-1" . "H\u00E1jek, V\u00E1clav" . "Ro\u010D.^14" . "Reactive magnetron sputtering of carbon nitride films: characterization of ion bombardment and optical emission spectroscopy in deposition zone"@en . "CNx films were deposited on Si(100) substrates at a substrate temperature of 600 C using DC magnetron sputtering of a high-purity graphite target in pure nitrogen. The film characteristics were primarily controlled by the pressure, p, (0.05 to 5 Pa), thedischarge current in the magnetron target, Im, (0.5 to 3 A), and the RF-induced negative substrate bias voltage, Ub, (-300 to -1200 V). The films were found to be amorphous, and they possessed the N/C atomic concentration ratio up to 0.35, the hardness uto 40 GPa, the elastic recovery up to 85%, and good adhesion and promising tribological properties. A complex relationship between the process parameters and the film characteristics was investigated on the basis of correlations between the process parameters and the respective internal plasma parameters, such as ion bombardment characteristics and the densities of N atoms and CN radicals in front of the substrate." . "3"^^ . . "3"^^ . . . "Reactive magnetron sputtering of carbon nitride films: characterization of ion bombardment and optical emission spectroscopy in deposition zone" . "Reactive magnetron sputtering of carbon nitride films: characterization of ion bombardment and optical emission spectroscopy in deposition zone" . "752006" . . "RIV/49777513:23520/99:00042299!RIV/2000/MSM/235200" . "Praha" . "Vl\u010Dek, Jaroslav" . "6"^^ . "Rus\u0148\u00E1k, Karel" . "Reactive magnetron sputtering of carbon nitride films: characterization of ion bombardment and optical emission spectroscopy in deposition zone" . "Vl\u010Dek, Jaroslav" . "H\u00E1jek, V\u00E1clav" .