"September 2014" . . "1"^^ . "RIV/49777513:23520/14:43923370" . . "Presence of a small fraction of high-energy particles in the total particle flux is an important factor which affects the structure of atom-by-atom deposited thin films. In this paper the role of high-energy (up to 400 eV) particles is studied by molecular dynamics simulations, focused on obtaining quantitative information not accessible experimentally. In the case of film-forming particles, the results show that one to few percent of high-energy atoms is sufficient for amorphization of otherwise crystalline materials. Consequently, all film-forming atoms have to be considered separately and have the optimum energy (optimum averaged energy per atom is insufficient). In the case of energetic bombardment by non film-forming particles such as Ar, the results show that the film amorphization can take place but it requires higher energies and/or much higher number of particle impacts compared to the former case."@en . "Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study" . "Surface and Coatings Technology" . "000340977300016" . "7"^^ . . "P(GA14-03875S)" . . . "1"^^ . . . . . . . "10.1016/j.surfcoat.2014.05.072" . "http://dx.doi.org/10.1016/j.surfcoat.2014.05.072" . "Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study"@en . "Al2O3; molecular dynamics; high-energy ions; high-energy bombardment; ion-assisted deposition; crystal growth"@en . "RIV/49777513:23520/14:43923370!RIV15-GA0-23520___" . "Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study" . "254" . . "Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study"@en . . "23520" . "[42DF996E50F3]" . . "41096" . "NL - Nizozemsko" . "Hou\u0161ka, Ji\u0159\u00ED" . . . . . "0257-8972" . "Presence of a small fraction of high-energy particles in the total particle flux is an important factor which affects the structure of atom-by-atom deposited thin films. In this paper the role of high-energy (up to 400 eV) particles is studied by molecular dynamics simulations, focused on obtaining quantitative information not accessible experimentally. In the case of film-forming particles, the results show that one to few percent of high-energy atoms is sufficient for amorphization of otherwise crystalline materials. Consequently, all film-forming atoms have to be considered separately and have the optimum energy (optimum averaged energy per atom is insufficient). In the case of energetic bombardment by non film-forming particles such as Ar, the results show that the film amorphization can take place but it requires higher energies and/or much higher number of particle impacts compared to the former case." .