"23520" . "Thin Solid Films" . "4"^^ . "8"^^ . . "High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties" . . "Rezek, Ji\u0159\u00ED" . "Vl\u010Dek, Jaroslav" . "4"^^ . . "P(GA14-03875S)" . "Hardness; Electrical conductivity; Optical properties; Tunable properties; Ta-O-N; High deposition rates; Reactive HiPIMS"@en . . "000341057300012" . "[367AA2589917]" . "NL - Nizozemsko" . "0040-6090" . . "Hou\u0161ka, Ji\u0159\u00ED" . "2014" . . "RIV/49777513:23520/14:43922535" . . "High-power impulse magnetron sputtering of a planar Ta target in various Ar+O2+N2 gas mixtures was investigated. A strongly unbalanced magnetron was driven by a pulsed dc power supply at the average target power density in a pulse. Si (100) and glass substrates were at a floating potential, and the substrate temperatures were less than 285 \u00B0C. A pulsed reactive gas (O2 and N2) flow control made it possible to produce high-quality Ta-O-N films of various elemental compositions with high deposition rates of 97 - 190 nm/min. The film compositions (in at.%) were varied gradually from Ta28O71 with less than 1 at. % of H to Ta38O4N55 with 3 at. % of H. The Ta27O40N31 films with 2 at. % of H, which were produced with the highest deposition rate of 190 nm/min, were nanocrystalline with an optical band gap of 2.5 eV. These films with a shift of the absorption edge to 500 nm are potential candidates for application as visible-light driven photocatalysts."@en . . "High-power impulse magnetron sputtering of a planar Ta target in various Ar+O2+N2 gas mixtures was investigated. A strongly unbalanced magnetron was driven by a pulsed dc power supply at the average target power density in a pulse. Si (100) and glass substrates were at a floating potential, and the substrate temperatures were less than 285 \u00B0C. A pulsed reactive gas (O2 and N2) flow control made it possible to produce high-quality Ta-O-N films of various elemental compositions with high deposition rates of 97 - 190 nm/min. The film compositions (in at.%) were varied gradually from Ta28O71 with less than 1 at. % of H to Ta38O4N55 with 3 at. % of H. The Ta27O40N31 films with 2 at. % of H, which were produced with the highest deposition rate of 190 nm/min, were nanocrystalline with an optical band gap of 2.5 eV. These films with a shift of the absorption edge to 500 nm are potential candidates for application as visible-light driven photocatalysts." . "19157" . . . "High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties"@en . "\u010Cerstv\u00FD, Radom\u00EDr" . . . "http://www.sciencedirect.com/science/article/pii/S0040609014007548" . . "10.1016/j.tsf.2014.07.033" . . "566" . . "High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties"@en . "High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties" . . "RIV/49777513:23520/14:43922535!RIV15-GA0-23520___" . . . . . . .