. "10.1016/j.tsf.2013.07.013" . "000323859400028" . . "I" . "Vl\u010Dek, Jaroslav" . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "http://dx.doi.org/10.1016/j.tsf.2013.07.013" . "23520" . . "Meletis, Efstathios I." . . "RIV/49777513:23520/13:43918961!RIV14-MSM-23520___" . "RIV/49777513:23520/13:43918961" . . "Neuveden" . . "Steidl, Petr" . . "Thin Solid Films" . "7"^^ . "He, Jie" . "[C0F10A6B4A81]" . . "In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 \u00B0C in He and (ii) 1700 \u00B0C in air. XPS studies showed that annealing to 1400 \u00B0C in He does not affect the chemical composition of the film, while annealing to 1700 \u00B0C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 \u00B0C in He are amorphous. A three layer structure was found in the film annealed to 1700 \u00B0C in air: the original amorphous Si-B-C-N base-layer, a transition nanocomposite layer consisting of BN nanocrystals embedded in a SiOx amorphous matrix, and an amorphous SiOx top layer. The present evidence suggests that O reacts with Si in the Si-B-C-N amorphous structure resulting in the formation of SiOx and concomitant nucleation of BN crystals at the base/transition layer interface. Nano-indentation tests show that the film annealed to 1400 \u00B0C in He has a hardness of 22.1 GPa and a modulus of 210.8 GPa, higher than that of the as-deposited film (19.5 and 204.9 GPa), whereas the values for the film annealed to 1700 \u00B0C in air (9.8 and 76.5 GPa) simply reflect those of the SiOx top layer. The high oxidation resistance of the films is attributed to the presence of BN in front of the base layer interface that can act as a barrier to O diffusion."@en . "3"^^ . . . . "x-ray photoelectron spectroscopy; transmission electron microscopy; pulsed dc magnetron sputtering; microstructure; Thermal barrier coatings"@en . "Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films"@en . . "Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films"@en . . "0040-6090" . . "7"^^ . "Zhang, Minghui" . "Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films" . . "Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films" . "88246" . "542" . "Jiang, Jiechao" . . . "Zeman, Petr" . "In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 \u00B0C in He and (ii) 1700 \u00B0C in air. XPS studies showed that annealing to 1400 \u00B0C in He does not affect the chemical composition of the film, while annealing to 1700 \u00B0C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 \u00B0C in He are amorphous. A three layer structure was found in the film annealed to 1700 \u00B0C in air: the original amorphous Si-B-C-N base-layer, a transition nanocomposite layer consisting of BN nanocrystals embedded in a SiOx amorphous matrix, and an amorphous SiOx top layer. The present evidence suggests that O reacts with Si in the Si-B-C-N amorphous structure resulting in the formation of SiOx and concomitant nucleation of BN crystals at the base/transition layer interface. Nano-indentation tests show that the film annealed to 1400 \u00B0C in He has a hardness of 22.1 GPa and a modulus of 210.8 GPa, higher than that of the as-deposited film (19.5 and 204.9 GPa), whereas the values for the film annealed to 1700 \u00B0C in air (9.8 and 76.5 GPa) simply reflect those of the SiOx top layer. The high oxidation resistance of the films is attributed to the presence of BN in front of the base layer interface that can act as a barrier to O diffusion." . .