. "Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux"@en . "2013" . . "Journal of Physics D: Applied Physics" . "10"^^ . "I" . . . . "RIV/49777513:23520/13:43918481" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "[C1E076D8A70E]" . "Klemberg-Sapieha, Jolanta E." . "RIV/49777513:23520/13:43918481!RIV14-MSM-23520___" . "Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux" . . . "Nb coatings; plasma; magnetic field; deposition rate enhancement; HiPIMS"@en . "5"^^ . "We systematically investigate and quantify different physical phenomena influencing the deposition rate, aD, of Nb coatings prepared by high power impulse magnetron sputtering (HiPIMS), and propose a straightforward approach for deposition rate enhancement through the control of the magnetron's magnetic field. The magnetic field strength at the target surface, B, of a 50 mm diameter magnetron was controlled by the application of paramagnetic spacers with different thicknesses in between the magnetron surface and the target. We found that lowering B achieved by the application of a 2.8 mm thick spacer led to an increase in aD by a factor of ~4.5 (from 10.6 to 45.2 nm/min) when the discharge was operated at a fixed average pulse target power density (2.5 kW/cm2). However, the ionized fraction of the deposition flux onto the substrate was found to be comparable, despite a large difference in B-dependent discharge characteristics (magnetron voltage and discharge current). We show that the decrease in aD commonly observed in HiPIMS (ranging from 33% to 84% in comparison with dc magnetron sputtering in the presented experiments) is governed by different physical processes, depending on the value of B: for high B, the back-attraction of the target ions towards the target is the dominant effect, while for low B the ion back-attraction, the sub-linear dependence of the sputtering yield on the ion energy, and the variation in material transport effects are all important. Finally, we offer a theoretical background for the observed results, demonstrating that the here-presented conclusions may be applicable to HiPIMS discharges using different metal targets and different inert gases."@en . . "\u010Capek, Ji\u0159\u00ED" . "0022-3727" . . . "Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux"@en . . . "46" . . . "H\u00E1la, Mat\u011Bj" . "1"^^ . . "We systematically investigate and quantify different physical phenomena influencing the deposition rate, aD, of Nb coatings prepared by high power impulse magnetron sputtering (HiPIMS), and propose a straightforward approach for deposition rate enhancement through the control of the magnetron's magnetic field. The magnetic field strength at the target surface, B, of a 50 mm diameter magnetron was controlled by the application of paramagnetic spacers with different thicknesses in between the magnetron surface and the target. We found that lowering B achieved by the application of a 2.8 mm thick spacer led to an increase in aD by a factor of ~4.5 (from 10.6 to 45.2 nm/min) when the discharge was operated at a fixed average pulse target power density (2.5 kW/cm2). However, the ionized fraction of the deposition flux onto the substrate was found to be comparable, despite a large difference in B-dependent discharge characteristics (magnetron voltage and discharge current). We show that the decrease in aD commonly observed in HiPIMS (ranging from 33% to 84% in comparison with dc magnetron sputtering in the presented experiments) is governed by different physical processes, depending on the value of B: for high B, the back-attraction of the target ions towards the target is the dominant effect, while for low B the ion back-attraction, the sub-linear dependence of the sputtering yield on the ion energy, and the variation in material transport effects are all important. Finally, we offer a theoretical background for the observed results, demonstrating that the here-presented conclusions may be applicable to HiPIMS discharges using different metal targets and different inert gases." . "http://stacks.iop.org/JPhysD/46/205205" . "Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux" . "Martin\u016F, Ludv\u00EDk" . "Zabeida, Oleg" . "23520" . "000318546100011" . "10.1088/0022-3727/46/20/205205" . . . "68419" .