"Musil, Jind\u0159ich" . . "NL - Nizozemsko" . "Ta-Si-N films; oxidation resistance; thermogravimetry; sputtering"@en . . "High-temperature oxidation resistance of Ta-Si-N films with a high Si content"@en . . "High-temperature oxidation resistance of Ta-Si-N films with a high Si content" . . "3"^^ . "Daniel, Rostislav" . . "0257-8972" . "Zeman, Petr" . . . . "Vysokoteplotn\u00ED oxida\u010Dn\u00ED odolnost vrstev Ta-Si-N s vysok\u00FDm obsahem Si"@cs . "6"^^ . . . "RIV/49777513:23520/06:00000087!RIV07-GA0-23520___" . "High-temperature oxidation resistance of Ta-Si-N films with a high Si content" . "The high-temperature oxidation resistance of ternary Ta-Si-N films with a high Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300\u00B0C. Additional analyses including optical microscopy, scanning electron microscopy, X-ray diffraction and the microhardness measurement were carried out as well"@en . "Vysokoteplotn\u00ED oxida\u010Dn\u00ED odolnost vrstev Ta-Si-N s vysok\u00FDm obsahem Si"@cs . "0" . "[4448E739A641]" . . "P(GP106/03/D009), Z(MSM4977751302)" . . "Surface and Coatings Technology" . "4091" . "High-temperature oxidation resistance of Ta-Si-N films with a high Si content"@en . "Vysokoteplotn\u00ED oxida\u010Dn\u00ED odolnost vrstev Ta-Si-N s vysok\u00FDm obsahem Si p\u0159ipraven\u00FDch reaktivn\u00EDm magnetronov\u00FDm napra\u0161ov\u00E1n\u00EDm byla studov\u00E1na pomoc\u00ED vysokorozli\u0161ovac\u00ED termogravimetrie v proud\u00EDc\u00EDm vzduchu do teploty 1300\u00B0C. V\u00FDsledky uk\u00E1zaly v\u00FDbornou oxida\u010Dn\u00ED odolnost vrstev a\u017E do 1300\u00B0C. Neptrn\u00E1 oxiadce je spojena s vytvo\u0159en\u00EDm tenk\u00E9 povrchov\u00E9 vrstvy br\u00E1n\u00EDc\u00ED dal\u0161\u00ED oxidaci objemu vrstvy."@cs . "23520" . "The high-temperature oxidation resistance of ternary Ta-Si-N films with a high Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300\u00B0C. Additional analyses including optical microscopy, scanning electron microscopy, X-ray diffraction and the microhardness measurement were carried out as well" . . . . . "477730" . . . "RIV/49777513:23520/06:00000087" . . "3"^^ . .