. "Kontaktovac\u00ED p\u0159\u00EDpravek pro m\u011B\u0159en\u00ED OFET struktur" . . "Kontaktovac\u00ED p\u0159\u00EDpravek pro m\u011B\u0159en\u00ED OFET struktur"@cs . . "2"^^ . . . "Kontaktovac\u00ED p\u0159\u00EDpravek pro m\u011B\u0159en\u00ED OFET struktur" . . . "\u010Cengery, Ji\u0159\u00ED" . "RIV/49777513:23220/14:43920756" . "2"^^ . "Pretl, Silvan" . . . "funk\u010Dn\u00ED vzorek byl vyroben a funk\u010Dn\u011B otestov\u00E1n. Kontaktn\u00ED osoba Z\u010CU: Ing. Ji\u0159\u00ED \u010Cengery, Ph.D., Z\u00E1pado\u010Desk\u00E1 univerzita v Plzni, Univerzitn\u00ED 26, 306 14 Plze\u0148, Katedra technologi\u00ED a m\u011B\u0159en\u00ED." . "24904" . "Contacting Measuring Device OFET Structures"@en . "Kontaktovac\u00ED p\u0159\u00EDpravek pro m\u011B\u0159en\u00ED OFET struktur"@cs . "[C56AFB2ADAC5]" . . "V\u00FDsledek je vyu\u017E\u00EDv\u00E1n p\u0159\u00EDjemcem. Ekonomick\u00E9 parametry se neuv\u00E1d\u00ED." . . "Kontaktovac\u00ED p\u0159\u00EDpravek byl vyvinut pro p\u0159ipojen\u00ED m\u011B\u0159ic\u00EDch kontakt\u016F na speci\u00E1ln\u00ED substr\u00E1t. K\u0159em\u00EDkov\u00FD substr\u00E1t s interdigit\u00E1ln\u00EDmi elektrodami je nejprve vlo\u017Een do speci\u00E1ln\u00ED patice (A3500-314-23), z kter\u00E9 je pomoc\u00ED kontaktovac\u00EDho p\u0159\u00EDpravku p\u0159ipojen na konektor. Z d\u016Fvodu m\u011B\u0159en\u00ED velmi mal\u00FDch proud\u016F, je pou\u017Eit substr\u00E1t s vysokou rezistivitou a st\u00E1lost\u00ED. P\u0159ipojen\u00ED m\u011B\u0159en\u00ED je realizov\u00E1no pomoc\u00ED metody Kelvin probes a je vytvo\u0159eno st\u00EDn\u011Bn\u00ED. Topologie je navrhnuta se 100 um izola\u010Dn\u00EDmi mezerami." . "22130-FV001-2014" . "Contacting tool has been developed for connecting the measuring contacts on a special substrate. The substrate is first inserted into a special socket (A3500-314-23) of which is connected through the contacting of a standard connector. In order to measure very small currents, A substrate with high resistivity and stability is used. Connecting measurement is performed using 4-wire method with guarding. The topology is designed with 100 um insulating gaps."@en . "contact OFET structures; contact OFET"@en . . . . . . . "23220" . "RIV/49777513:23220/14:43920756!RIV15-MSM-23220___" . "P(ED2.1.00/03.0094)" . "http://partnerstvi.fel.zcu.cz/vysledky" . "Contacting Measuring Device OFET Structures"@en . . . "Kontaktovac\u00ED p\u0159\u00EDpravek byl vyvinut pro p\u0159ipojen\u00ED m\u011B\u0159ic\u00EDch kontakt\u016F na speci\u00E1ln\u00ED substr\u00E1t. K\u0159em\u00EDkov\u00FD substr\u00E1t s interdigit\u00E1ln\u00EDmi elektrodami je nejprve vlo\u017Een do speci\u00E1ln\u00ED patice (A3500-314-23), z kter\u00E9 je pomoc\u00ED kontaktovac\u00EDho p\u0159\u00EDpravku p\u0159ipojen na konektor. Z d\u016Fvodu m\u011B\u0159en\u00ED velmi mal\u00FDch proud\u016F, je pou\u017Eit substr\u00E1t s vysokou rezistivitou a st\u00E1lost\u00ED. P\u0159ipojen\u00ED m\u011B\u0159en\u00ED je realizov\u00E1no pomoc\u00ED metody Kelvin probes a je vytvo\u0159eno st\u00EDn\u011Bn\u00ED. Topologie je navrhnuta se 100 um izola\u010Dn\u00EDmi mezerami."@cs .