. "4"^^ . . "Tou\u0161ek, Ji\u0159\u00ED" . . "RIV/49610040:_____/05:00000311!RIV06-MZP-49610040" . "The monitoring of c-Si wafer quality and cell production technology is the main purpose of this work. To characterize the silicon material during the process of the cell preparation, diffusion length of minority carriers L was chosen. The wavelength depe" . . "Ba\u0159inka, Radim" . "Metoda povrchov\u00E9ho fotonap\u011Bt\u00ED vyu\u017Eit\u00E1 pro monitorov\u00E1n\u00ED technologie v\u00FDroby sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F"@cs . "P(SM/300/1/03), P(SN/3/172/05)" . . . . "7"^^ . "Tou\u0161kov\u00E1, Jana" . . . . . "7"^^ . "Proceedings of the 20th International European Photovoltaic Solar Energy Conference held in Barcelona, Spain, 6-10 June 2005" . "Barcelona, Spain" . . "535970" . "Photovoltagemethod employed for monitoring of silicon solar cell technology" . "WIP - Renewable Energies" . "[1DEF6B80A3B4]" . "Hlavn\u00EDm c\u00EDlem pr\u00E1ce je monitorov\u00E1n\u00ED kvality c=Si desek v pr\u016Fb\u011Bhu procesu v\u00FDroby sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F. Pro charakterizace byla zvolena metoda povrchov\u00E9ho fotonap\u011Bt\u00ED, jej\u00EDm\u017E v\u00FDsledkem je ur\u010Den\u00ED dif\u00FAzn\u00ED d\u00E9lky minoritn\u00EDch nosi\u010D\u016F ze z\u00E1vislosti fotogenerovan\u00E9ho na"@cs . . "Photovoltagemethod employed for monitoring of silicon solar cell technology"@en . "826, 829" . . "Metoda povrchov\u00E9ho fotonap\u011Bt\u00ED vyu\u017Eit\u00E1 pro monitorov\u00E1n\u00ED technologie v\u00FDroby sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F"@cs . "Photovoltagemethod employed for monitoring of silicon solar cell technology"@en . "Photovoltagemethod employed for monitoring of silicon solar cell technology" . . . "3-936338-19-1" . . . "RIV/49610040:_____/05:00000311" . "Poruba, Ale\u0161" . . "2005-06-06+02:00"^^ . "Mnichov N\u011Bmecko" . "Silicon wafers, c-Si solar cells, Diffusion length, Surface photovoltage"@en . . . "The monitoring of c-Si wafer quality and cell production technology is the main purpose of this work. To characterize the silicon material during the process of the cell preparation, diffusion length of minority carriers L was chosen. The wavelength depe"@en .