"Aveiro, Portugal" . . "Surface semiconductor phenomena in ferroelectrics" . "Surface semiconductor phenomena in ferroelectrics" . "CD-ISAF-ECAPD-PFM-2012" . . "Sluka, Tom\u00E1\u0161" . . . . "24220" . . "P(GAP204/10/0616)" . "RIV/46747885:24220/12:#0002170" . . . . . . . . "172569" . . "[10554F529076]" . "University of Aveiro, Aveiro" . "2"^^ . "Mokr\u00FD, Pavel" . . "Free ferroelectric surface has been for a long time considered as a source of strong depolarizing field, which is generated by bound charge, when spontaneous polarization has nonzero normal component at the surface of the ferroelectric. In parallel, it was frequently considered that the bound charges are compensated mainly by ions from surrounding environment or by accumulation of charged defects from inside the ferroelectric. The recent observations of domain wall conductivity [Seidel J, et al, Nature Materials 8, 229 (2009)] and conductivity of free surfaces [Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)] revealed the essential role of semiconductor properties of ferroelectrics in the process of the bound charge compensation by intrinsic free-charge carriers. In this work, the intrinsic screening mechanism of the bound charge on the free ferroelectric surface by electrons and holes is studied by means of phase field simulation based on Landau-Ginzburg-Devoshire theory. The effect of intrinsic screening charge on the surface conductivity of a free ferroelectric surface is analyzed. It is shown that in the system with a ferroelectric domain wall that reaches the surface of the ferroelectric, the intrinsic screening charge forms a p-n junction. The applicability of such a system in future electronic devices is discussed."@en . . "Tagantsev, Alexander K." . . "3"^^ . "Free ferroelectric surface has been for a long time considered as a source of strong depolarizing field, which is generated by bound charge, when spontaneous polarization has nonzero normal component at the surface of the ferroelectric. In parallel, it was frequently considered that the bound charges are compensated mainly by ions from surrounding environment or by accumulation of charged defects from inside the ferroelectric. The recent observations of domain wall conductivity [Seidel J, et al, Nature Materials 8, 229 (2009)] and conductivity of free surfaces [Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)] revealed the essential role of semiconductor properties of ferroelectrics in the process of the bound charge compensation by intrinsic free-charge carriers. In this work, the intrinsic screening mechanism of the bound charge on the free ferroelectric surface by electrons and holes is studied by means of phase field simulation based on Landau-Ginzburg-Devoshire theory. The effect of intrinsic screening charge on the surface conductivity of a free ferroelectric surface is analyzed. It is shown that in the system with a ferroelectric domain wall that reaches the surface of the ferroelectric, the intrinsic screening charge forms a p-n junction. The applicability of such a system in future electronic devices is discussed." . "ferroelectric semiconductors; barium titanate; ferroelectric domain walls; phase field model simulations"@en . . . "Surface semiconductor phenomena in ferroelectrics"@en . "Surface semiconductor phenomena in ferroelectrics"@en . "RIV/46747885:24220/12:#0002170!RIV13-GA0-24220___" .