"Low-pressure O2 plasma exposures were performed on c-Si(001) at a radio frequency (rf)-powered electrode in the presence of substrate self-biasing (VB) from VB=?60 to ?600 V, in order to evaluate ion-surface interactions at the growth surface under ion bombardment conditions suitable for the fabrication of high quality optical coatings. The plasma-surface interactions were monitored in situ using real-time spectroscopic ellipsometry (RTSE), which reveals time- and ion-fluence-resolved information about depth-dependent modifications, such as damage and oxidation below the c-Si substrate surface. RTSE analysis indicates almost immediate damage formation ( 1 s) to a depth of a few nanometers below the surface after exposure to a low oxygen ion fluence (~5x1014 O cm?2). Oxide growth is detected at intermediate fluence (~1015?1016 O cm?2) and is attributed to O subplantation (shallow implantation); it forms near the surface of the target on top of an O-deficient interfacial damage layer (DL). Both" . . "063526-1 - 063526-16" . "Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study" . . "6" . "4"^^ . "Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study" . . . "Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study"@en . "100" . "RIV/44555601:13440/06:00003275" . "plasma deposition; RTSE; Monte Carlo"@en . . "[E5C279AFACAD]" . "Martinu, Ludvik" . . . "Desjardins, Partick" . "Journal of Applied Physics" . "Dynamika modifikac\u00ED Si(001) vyvolan\u00E1 iontov\u00FDm bombardem v n\u00EDzkotlak\u00E9m kysl\u00EDkov\u00E9m plazmatu: In situ spektroskopick\u00E1 elipsometrie a Monte Carlo simulace"@cs . "RIV/44555601:13440/06:00003275!RIV07-MSM-13440___" . "13440" . . . . . "16"^^ . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "0021-8979" . "Low-pressure O2 plasma exposures were performed on c-Si(001) at a radio frequency (rf)-powered electrode in the presence of substrate self-biasing (VB) from VB=?60 to ?600 V, in order to evaluate ion-surface interactions at the growth surface under ion bombardment conditions suitable for the fabrication of high quality optical coatings. The plasma-surface interactions were monitored in situ using real-time spectroscopic ellipsometry (RTSE), which reveals time- and ion-fluence-resolved information about depth-dependent modifications, such as damage and oxidation below the c-Si substrate surface. RTSE analysis indicates almost immediate damage formation ( 1 s) to a depth of a few nanometers below the surface after exposure to a low oxygen ion fluence (~5x1014 O cm?2). Oxide growth is detected at intermediate fluence (~1015?1016 O cm?2) and is attributed to O subplantation (shallow implantation); it forms near the surface of the target on top of an O-deficient interfacial damage layer (DL). Both"@en . . "\u0160vec, Martin" . . "Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study"@en . "Amassian, Aram" . "Dynamika modifikac\u00ED Si(001) vyvolan\u00E1 iontov\u00FDm bombardem v n\u00EDzkotlak\u00E9m kysl\u00EDkov\u00E9m plazmatu: In situ spektroskopick\u00E1 elipsometrie a Monte Carlo simulace"@cs . "472679" . . "P(LC06041)" . . "1"^^ . "Vrstva c-Si(001) byla vystavena n\u00EDzkotlak\u00E9mu kysl\u00EDkov\u00E9mu plazmatu s automatick\u00FDm p\u0159edp\u011Bt\u00EDm substr\u00E1tu od ?60 do ?600 V za \u00FA\u010Delem vyhodnocen\u00ED interakc\u00ED iont\u016F s povrchem p\u0159i v\u00FDrob\u011B velmi kvalitn\u00EDch optick\u00FDch vrstev. Interakce byly monitorov\u00E1ny in situ s vyu\u017Eit\u00EDm spektroskopick\u00E9 elipsometrie v re\u00E1ln\u00E9m \u010Dase (RTSE), kter\u00E1 odhaluje z\u00E1vislosti modifikace na \u010Dase nebo toku iont\u016F (poruchy, oxidace pod povrchem c-Si). RTSE anal\u00FDza ukazuje na t\u00E9m\u011B\u0159 okam\u017Eit\u00E9 tvo\u0159en\u00ED poruch ( 1 s) do hloubky n\u011Bkolika nanometr\u016F pod povrchem po vystaven\u00ED mal\u00E9mu toku kysl\u00EDkov\u00FDch iont\u016F (~5x1014 O cm?2). R\u016Fst oxidu je detekov\u00E1n p\u0159i st\u0159edn\u00EDm toku (~1015?1016 O cm?2) a je p\u0159ipisov\u00E1n implantaci kysl\u00EDku do mal\u00E9 hloubky. Na povrchu ter\u010De se vytv\u00E1\u0159\u00ED vrstva s velmi mal\u00FDm obsahem kysl\u00EDku. P\u0159i vysok\u00E9m toku (>1017 O cm?2) je pozorov\u00E1n r\u016Fst limitovan\u00FD hloubkou pr\u016Fniku iont\u016F od ~ 3,6 do 9,5 nm pro p\u0159edp\u011Bt\u00ED ?60 do ?600 V. Experiment\u00E1ln\u00ED pozorov\u00E1n\u00ED bylo dopln\u011Bno po\u010D\u00EDta\u010Dovou simulac\u00ED zalo\u017Eenou na metod\u011B Monte Carlo. Byl pou\u017Eit program Tridyn"@cs .