. "Pij\u00E1k, Anton" . "Byla vyvinuta technologie pro vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O s homogenitou tlou\u0161\u0165ky SiO2 vrstev do +/-2% na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm. Tato procesn\u00ED n\u00E1vodka specifikuje detaily vytv\u00E1\u0159en\u00ED dan\u00FDch oxid\u016F za v\u00FD\u0161e uveden\u00FDch podm\u00EDnek." . . "Ba\u0159inkov\u00E1, Pavl\u00EDna" . . "Poruba, Ale\u0161" . . "\u010Cech, Pavel" . "Byla vyvinuta technologie pro vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O s homogenitou tlou\u0161\u0165ky SiO2 vrstev do +/-2% na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm. Tato procesn\u00ED n\u00E1vodka specifikuje detaily vytv\u00E1\u0159en\u00ED dan\u00FDch oxid\u016F za v\u00FD\u0161e uveden\u00FDch podm\u00EDnek."@cs . "Operating process description for wet silicon oxide formation on Si wafers of 150 mm diameter during temperature of 960\u00B0C from hot demineralized H2O with uniformity of SiO2 layer thickness up to +/-2%"@en . "RIV/27711170:_____/13:#0000035" . . . "Zv\u00FD\u0161en\u00ED homogenity tlou\u0161\u0165ky SiO2 vrstev m\u00E1 pozitivn\u00ED vliv jak na zv\u00FD\u0161en\u00ED \u00FA\u010Dinnosti sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F, tak na zv\u00FD\u0161en\u00ED efektivity v\u00FDroby \u010Dl\u00E1nk\u016F samotn\u00FDch. Vy\u0161\u0161\u00ED \u00FA\u010Dinnost sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F p\u0159in\u00E1\u0161\u00ED pozitivn\u00ED ekonomick\u00FD efekt (vy\u0161\u0161\u00ED prodejn\u00ED cena)." . "P(TA01020972)" . . "6"^^ . "wet silicon oxide formation; uniformity of SiO2 layer"@en . "SVCS Process Innovation s.r.o., Opt\u00E1tova 37, Brno 637 00" . . "Operating process description for wet silicon oxide formation on Si wafers of 150 mm diameter during temperature of 960\u00B0C from hot demineralized H2O with uniformity of SiO2 layer thickness up to +/-2%"@en . . "RIV/27711170:_____/13:#0000035!RIV14-TA0-27711170" . "Procesn\u00ED n\u00E1vodky pro vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O s homogenitou tlou\u0161\u0165ky SiO2 vrstev do +/-2% na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm." . "A technology of wet silicon oxide formation on Si wafers of 150 mm diameter during temperature of 960\u00B0C from hot demineralized H2O with uniformity of SiO2 layer thickness up to +/-2% was developed. This operating process description specifies details of the oxide forming during conditions specified above."@en . "99923" . "A-2013-12-9-SVMSiO2-Sol-02" . "Na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm lze p\u0159i vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O dos\u00E1hnout homogenity tlou\u0161\u0165ky SiO2 vrstev do +/-2%." . "Procesn\u00ED n\u00E1vodky pro vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O s homogenitou tlou\u0161\u0165ky SiO2 vrstev do +/-2% na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm."@cs . . "2013-12-09+01:00"^^ . "SVMSiO2-Sol-02" . "Ba\u0159inka, Radim" . "2"^^ . . "Procesn\u00ED n\u00E1vodky pro vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O s homogenitou tlou\u0161\u0165ky SiO2 vrstev do +/-2% na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm." . . "[781A7B22F644]" . . . . "Pitrun, Ji\u0159\u00ED" . . "Procesn\u00ED n\u00E1vodky pro vytv\u00E1\u0159en\u00ED vlhk\u00FDch k\u0159em\u00EDkov\u00FDch oxid\u016F p\u0159i teplot\u011B 960\u00B0C z hork\u00E9 demineralizovan\u00E9 H2O s homogenitou tlou\u0161\u0165ky SiO2 vrstev do +/-2% na Si desk\u00E1ch o pr\u016Fm\u011Bru 150 mm."@cs .