. "P(TA01020972)" . "Procesn\u00ED n\u00E1vodka pro vytv\u00E1\u0159en\u00ED such\u00E9ho term\u00E1ln\u00EDho oxidu k\u0159em\u00EDku na fosforem difundovan\u00FDch Si desk\u00E1ch s c\u00EDlem tlou\u0161\u0165ky SiO2 vrstvy 25 a\u017E 30 nm"@cs . . "2012-11-21+01:00"^^ . "Wostr\u00FD, Petr" . "Procesn\u00ED n\u00E1vodka pro vytv\u00E1\u0159en\u00ED such\u00E9ho term\u00E1ln\u00EDho oxidu k\u0159em\u00EDku na fosforem difundovan\u00FDch Si desk\u00E1ch s c\u00EDlem tlou\u0161\u0165ky SiO2 vrstvy 25 a\u017E 30 nm" . . "Operating process description for dry thermal silicon oxide formation with target thickness of 25-30 nm on highly phosphorus doped Si substrates."@en . . . "Rychlost r\u016Fstu termick\u00E9ho SiO2 je zna\u010Dn\u011B z\u00E1visl\u00E1 na \u00FArovni dotace Si substr\u00E1tu a markantn\u011B se zvy\u0161uje pro siln\u011B dopovan\u00E9 povrchy. K\u0159em\u00EDkov\u00E9 sol\u00E1rn\u00ED \u010Dl\u00E1nky s vy\u0161\u0161\u00ED kvalitou povrchov\u00E9 pasivace pot\u0159ebuj\u00ED vrstvu SiO2, ale jej\u00ED tlou\u0161\u0165ka mus\u00ED b\u00FDt pr\u00E1v\u011B v rozmez\u00ED 25 a\u017E 30 nm (kompromis mezi vhodn\u00FDmi elektronick\u00FDmi a optick\u00FDmi vlastnostmi). Procesn\u00ED n\u00E1vodka specifikuje detaily p\u0159\u00EDpravy tenk\u00FDch pasiva\u010Dn\u00EDch SiO2 vrstev vysokoteplotn\u00ED termickou oxidac\u00ED (teplotn\u00ED profil procesu, \u010Dasovou z\u00E1voslost pr\u016Ftok\u016F jednotliv\u00FDch plyn\u016F) pro struktury sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F s m\u011Blk\u00FDm emitorem."@cs . . "Vy\u0161\u0161\u00ED \u00FA\u010Dinnost sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F p\u0159in\u00E1\u0161\u00ED pozitivn\u00ED ekonomick\u00FD efekt (vy\u0161\u0161\u00ED prodejn\u00ED cena). Znalost %22know-how%22 v dan\u00E9 problematice z\u00E1rove\u0148 posiluje kredit v\u00FDrobce za\u0159\u00EDzen\u00ED (SVCS) u sv\u00FDch z\u00E1kazn\u00EDk\u016F.Metodika m\u016F\u017Ee b\u00FDt rovn\u011B\u017E pou\u017Eiteln\u00E1 v polovodi\u010Dov\u00E9m pr\u016Fmyslu." . "Struktura sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F s antireflexn\u00ED a pasiva\u010Dn\u00ED dvojvrstvou (SiO2+Si3N4) je v\u00FDhodn\u00E1 pro Si \u010Dl\u00E1nky s m\u011Blk\u00FDm, respektive selektivn\u00EDm emitorem pro sn\u00ED\u017Een\u00ED povrchov\u00FDch rekombina\u010Dn\u00EDch ztr\u00E1t. V\u00FDsledkem jsou tedy \u010Dl\u00E1nky s vy\u0161\u0161\u00EDm generovan\u00FDm nap\u011Bt\u00EDm (oproti standardn\u00EDm struktur\u00E1m a\u017E o 15 mV)." . "SVPNSOP_SOL_01" . "[ABE17C6F9925]" . "Ba\u0159inkov\u00E1, Pavl\u00EDna" . "Procesn\u00ED n\u00E1vodka pro vytv\u00E1\u0159en\u00ED such\u00E9ho term\u00E1ln\u00EDho oxidu k\u0159em\u00EDku na fosforem difundovan\u00FDch Si desk\u00E1ch s c\u00EDlem tlou\u0161\u0165ky SiO2 vrstvy 25 a\u017E 30 nm"@cs . "Pitrun, Ji\u0159\u00ED" . "RIV/27711170:_____/12:#0000008!RIV13-TA0-27711170" . "Frant\u00EDk, Ond\u0159ej" . "162382" . "7"^^ . . "Ba\u0159inka, Radim" . "Rychlost r\u016Fstu termick\u00E9ho SiO2 je zna\u010Dn\u011B z\u00E1visl\u00E1 na \u00FArovni dotace Si substr\u00E1tu a markantn\u011B se zvy\u0161uje pro siln\u011B dopovan\u00E9 povrchy. K\u0159em\u00EDkov\u00E9 sol\u00E1rn\u00ED \u010Dl\u00E1nky s vy\u0161\u0161\u00ED kvalitou povrchov\u00E9 pasivace pot\u0159ebuj\u00ED vrstvu SiO2, ale jej\u00ED tlou\u0161\u0165ka mus\u00ED b\u00FDt pr\u00E1v\u011B v rozmez\u00ED 25 a\u017E 30 nm (kompromis mezi vhodn\u00FDmi elektronick\u00FDmi a optick\u00FDmi vlastnostmi). Procesn\u00ED n\u00E1vodka specifikuje detaily p\u0159\u00EDpravy tenk\u00FDch pasiva\u010Dn\u00EDch SiO2 vrstev vysokoteplotn\u00ED termickou oxidac\u00ED (teplotn\u00ED profil procesu, \u010Dasovou z\u00E1voslost pr\u016Ftok\u016F jednotliv\u00FDch plyn\u016F) pro struktury sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F s m\u011Blk\u00FDm emitorem." . "Growth rate of thermal SiO2 layer depends on the doping level within Si substrate and it is strongly increased for highly doped surfaces. Silicon solar cells with enhanced surface quality need passivation SiO2 layer with the thickness between 25 and 30 nm (as a compromise of suitable electronic and optical properties). Operating description specifies details of the high quality thermal SiO2 layer preparation (temperature profile and time dependence of individual gas flow rates) for solar cell structures with shallow emitter."@en . . "Operating process description for dry thermal silicon oxide formation with target thickness of 25-30 nm on highly phosphorus doped Si substrates."@en . "1"^^ . . "A-2012-11-21-SVPNSOP_SOL_01" . . "SVCS Process Innovation s.r.o., Na Pot\u016F\u010Dk\u00E1ch 163, Vala\u0161sk\u00E9 Mezi\u0159\u00ED\u010D\u00ED 757 01" . "RIV/27711170:_____/12:#0000008" . . "high temperature dry oxidation of silicon; oxidation of phosphorus doped silicon"@en . "Procesn\u00ED n\u00E1vodka pro vytv\u00E1\u0159en\u00ED such\u00E9ho term\u00E1ln\u00EDho oxidu k\u0159em\u00EDku na fosforem difundovan\u00FDch Si desk\u00E1ch s c\u00EDlem tlou\u0161\u0165ky SiO2 vrstvy 25 a\u017E 30 nm" . "Poruba, Ale\u0161" . . "\u010Cech, Pavel" . . . .