"Process flow for manufacturing Non-Punch Through (NPT) Trench Insulated-Gate Bipolar Transistors (IGBTs) for 600 V minimum breakdown voltage using 150 mm wafers."@en . . "600V NPT IGBT Process"@en . "58350" . "Pr\u016Fm\u011Brn\u00E9 jednotkov\u00E9 n\u00E1klady o 16% ni\u017E\u0161\u00ED proti c\u00EDl\u016Fm projektu." . . . . . . . "P(FR-TI3/534)" . . . . . . . "RIV/26821532:_____/14:#0000078!RIV14-MPO-26821532" . "RIV/26821532:_____/14:#0000078" . . "600V NPT IGBT" . "2"^^ . "semiconductor, IGBT, high voltage technology, power device"@en . "Kuruc, Marian" . "Freundlich, Pavel" . . "4"^^ . "600V NPT IGBT Process"@en . . "600V NPT IGBT Process" . "L\u00EDbezn\u00FD, Milan" . . . . "[16758A834C51]" . . "Process flow for manufacturing Non-Punch Through (NPT) Trench Insulated-Gate Bipolar Transistors (IGBTs) for 600 V minimum breakdown voltage using 150 mm wafers." . "Z\u00E1v\u011Brn\u00E9 nap\u011Bt\u00ED 650V, satura\u010Dn\u00ED nap\u011Bt\u00ED 1,77V, sp\u00EDnac\u00ED ztr\u00E1ty 0.30V. V\u00FDsledek bude vyu\u017Eit p\u0159\u00EDjemcem - ON SEMICONDUCTOR (I\u010C26821532) ve v\u00FDrobn\u00ED lince CZ4 v souladu se sm\u011Brnic\u00ED 1/2014 (ITD11) ze dne 26.3.2014. Licen\u010Dn\u00ED smlouva nebyla uzav\u0159ena. Odpov\u011Bdnost: M. Lorenc, 571754507, michal.lorenc@onsemi.com." . . . "600V NPT IGBT Process" . "Vavro, Juraj" .