. "OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon"@en . . "RIV/26821532:_____/07:#0000004" . "3"^^ . "[1677E8464628]" . "0013-4651" . . "3"^^ . "H904-H909" . . "6"^^ . . . . "Struktura OISF a r\u016Fstov\u00FDch precipit\u00E1t\u016F v k\u0159em\u00EDku siln\u011B legovan\u00E9m b\u00F3rem"@cs . "Silicon, OISF, precipitation, boron doped"@en . "10" . . . "2007 (154)" . "P(FI-IM2/131)" . . "439086" . "OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon" . "Journal of The Electrochemical Society" . "V\u00E1lek, Luk\u00E1\u0161" . . . "OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon"@en . "RIV/26821532:_____/07:#0000004!RIV08-MPO-26821532" . "\u0160ik, Jan" . "We study the pattern of OISF on heavily boron doped Si wafers. The measured radii of the OISF pattern are compared with V/G simulations and the dependence of the critical V/G value on boron concentration is constructed. The value for undoped silicon is assumed to be close to 0.13 mm2/min K. The critical value rises steadily with boron concentration following a logarithmic dependency. The OISF ring located in the P band, commonly observed in lightly doped silicon, is not detected. We observe the banded OISF pattern, which reflects the residual vacancy profile according to the qualitative model for microdefects formation proposed by Voronkov and Falster. Such OISF distribution is not reported so far. As an explanation, abnormal oxygen precipitation during crystal growth due to heavy boron doping and high oxygen content is assumed. Furthermore, we observe fine structure of the L band and a strong dependence of the OISF pattern appearance on the oxygen content and the crystal thermal history." . "Struktura OISF a r\u016Fstov\u00FDch precipit\u00E1t\u016F v k\u0159em\u00EDku siln\u011B legovan\u00E9m b\u00F3rem"@cs . . . "OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon" . . . "Studujeme strukturu vrstevn\u00FDch chyb vyvolan\u00FDch oxidac\u00ED (OISF) v k\u0159em\u00EDku siln\u011B legovan\u00E9m b\u00F3rem. M\u011B\u0159en\u00FD polom\u011Br struktury OISF je srovn\u00E1n se simukacemi v/G a se z\u00E1vislost\u00ED kritick\u00E9 hodnote v/G na koncentraci b\u00F3ru v krystalu. Jako prvn\u00ED identifikujeme p\u00E1sovou strukturu OISF ringu a objas\u0148ujeme jej\u00ED p\u0159\u00ED\u010Dinu v abnorm\u00E1ln\u00ED precipitaci kysl\u00EDku."@cs . "We study the pattern of OISF on heavily boron doped Si wafers. The measured radii of the OISF pattern are compared with V/G simulations and the dependence of the critical V/G value on boron concentration is constructed. The value for undoped silicon is assumed to be close to 0.13 mm2/min K. The critical value rises steadily with boron concentration following a logarithmic dependency. The OISF ring located in the P band, commonly observed in lightly doped silicon, is not detected. We observe the banded OISF pattern, which reflects the residual vacancy profile according to the qualitative model for microdefects formation proposed by Voronkov and Falster. Such OISF distribution is not reported so far. As an explanation, abnormal oxygen precipitation during crystal growth due to heavy boron doping and high oxygen content is assumed. Furthermore, we observe fine structure of the L band and a strong dependence of the OISF pattern appearance on the oxygen content and the crystal thermal history."@en . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . .