"Lorenc, Michal" . "Ro\u017Enov pod Radho\u0161t\u011Bm (CZ)" . "P(FI-IM2/131)" . "V\u00E1lek, Luk\u00E1\u0161" . "Vyu\u017Eit\u00ED syst\u00E9mu multivrstev polykrystalick\u00E9ho k\u0159em\u00EDku - oxidu k\u0159em\u00EDku pro zv\u00FD\u0161en\u00ED getra\u010Dn\u00EDch schopnost\u00ED zadn\u00ED strany k\u0159em\u00EDkov\u00E9 desky a vysv\u011Btlen\u00ED funkce multivrstev pro zv\u00FD\u0161en\u00ED getra\u010Dn\u00EDch schopnost\u00ED k\u0159em\u00EDkov\u00FDch desek."@cs . "Gettering capability and structure of polycrystalline silicon layers"@en . "4"^^ . . . . . "3"^^ . "Gettering capability and structure of polycrystalline silicon layers"@en . "Getra\u010Dn\u00ED schopnosti a struktura polykrystalicj\u00FDch k\u0159em\u00EDkov\u00FDch vrstev"@cs . "Utilization of multilayer system of polycrystalline silicon \u2013 silicon dioxide for backside gettering as well as the idea of its function is subject of US Patent proceedings and is proprietary of ON Semiconductor Czech Republic" . "477075" . "3"^^ . "80-239-7781-4" . . . "Getra\u010Dn\u00ED schopnosti a struktura polykrystalicj\u00FDch k\u0159em\u00EDkov\u00FDch vrstev"@cs . . "[9E9F69526EBF]" . . "Utilization of multilayer system of polycrystalline silicon \u2013 silicon dioxide for backside gettering as well as the idea of its function is subject of US Patent proceedings and is proprietary of ON Semiconductor Czech Republic"@en . "SILICON 2006" . "2006-11-07+01:00"^^ . "408-411" . . . "RIV/26821532:_____/06:#0000007!RIV08-MPO-26821532" . "TECON Scientific, s.r.o. (ed. K. Vojt\u011Bchovsk\u00FD)" . . . . . . . "Silicon, gettering, polycrystalline, multilayer"@en . . "RIV/26821532:_____/06:#0000007" . . "Gettering capability and structure of polycrystalline silicon layers" . "Gettering capability and structure of polycrystalline silicon layers" . "Ro\u017Enov pod Radho\u0161t\u011Bm (CZ)" .