"3"^^ . . "Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination"@en . . . "Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination"@en . "RIV/26821532:_____/05:#0000002" . "87"^^ . . "Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination" . "80-89088-42-2" . "Development of Materials Science in Research and Education" . "RIV/26821532:_____/05:#0000002!RIV08-MPO-26821532" . . "Lorenc, Michal" . . . "Metoda MCC (Method of Controlled Contamination) byla vyvinuta v ON SEMICONDUCTOR CZECH REPUBLIC pro m\u011B\u0159en\u00ED getra\u010Dn\u00EDch schopnost\u00ED k\u0159em\u00EDkov\u00FDch desek. MCC je zalo\u017Eena na \u0159\u00EDzen\u00E9 konatminaci k\u0159em\u00EDkov\u00E9 desky a n\u00E1sledn\u00E9 visualizaci odpov\u00EDdaj\u00EDc\u00EDch defekt\u016F. Zm\u011B\u0159ili jsme getra\u010Dn\u00ED schopnosti Si desek a zjistili jsme \u0159\u00E1dov\u011B vy\u0161\u0161\u00ED getra\u010Dn\u00ED schopnosti desek Si:B ve srovn\u00E1n\u00ED s deskami Si:As/Sb. Getra\u010Dn\u00ED kapacita desek Si:B po vysokoteplotn\u00EDm \u017E\u00EDh\u00E1n\u00ED vzrostla, pro Si:As/Sb nebyly zji\u0161t\u011Bny m\u011B\u0159iteln\u00E9 zm\u011Bny. R\u016Fzn\u00E9 chov\u00E1n\u00ED k\u0159em\u00EDkov\u00FDch desek odpov\u00EDd\u00E1 odli\u0161n\u00E9mu obsahu kysl\u00EDku a precipitaci kysl\u00EDku v z\u00E1vislosti na teplotn\u00ED historii krystalu. Legov\u00E1n\u00ED N v ka\u017Ed\u00E9m p\u0159\u00EDpad\u011B podporovalo precipitaci kysl\u00EDku a zv\u00FD\u0161ilo tak getra\u010Dn\u00ED schopnosti desek"@cs . "42-43" . "Ke\u017Emarsk\u00E9 \u017D\u013Eaby (SR)" . . "P(FI-IM2/131)" . "Czech and Slovak Association for Crystal Growth" . "Method of controlled contamination (MCC) was developed in ON SEMICONDUCTOR CZECH REPUBLIC for measurement of gettering efficiency of silicon wafers. This method is based on quantified contamination of wafer backside and after delineating of corresponding haze (the form of agglomerates of etch pits) on the front side. We noted better gettering of Si:B compared to Si:As/Sb. The gettering ability of Si:B increases after heat treatment against no changes of Si:As/Sb. This behaviour is fully related to different oxygen content and different precipitation in dependence of crystal thermal history. Doping by N initiated oxygen precipitation and significantly higher gettering ability was measured for all samples." . "2005-09-05+02:00"^^ . "Silicon, gettering, crystal, contamination"@en . "Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination" . . "Studium getra\u010Dn\u00ED schopnosti k\u0159em\u00EDkov\u00FDch desek metodou \u0159\u00EDzen\u00E9 kontaminace"@cs . . . "[E36EC14F7080]" . "Bratislava (SR)" . "V\u00E1lek, Luk\u00E1\u0161" . "Studium getra\u010Dn\u00ED schopnosti k\u0159em\u00EDkov\u00FDch desek metodou \u0159\u00EDzen\u00E9 kontaminace"@cs . "Method of controlled contamination (MCC) was developed in ON SEMICONDUCTOR CZECH REPUBLIC for measurement of gettering efficiency of silicon wafers. This method is based on quantified contamination of wafer backside and after delineating of corresponding haze (the form of agglomerates of etch pits) on the front side. We noted better gettering of Si:B compared to Si:As/Sb. The gettering ability of Si:B increases after heat treatment against no changes of Si:As/Sb. This behaviour is fully related to different oxygen content and different precipitation in dependence of crystal thermal history. Doping by N initiated oxygen precipitation and significantly higher gettering ability was measured for all samples."@en . . . . . . "3"^^ . "542605" . . .