"3"^^ . "2013-01-01+01:00"^^ . . "7"^^ . "Research reactor LVR-15 with a thermal output of 10 MW is focused on material research and production of radionuclides for medical and industrial purposes. Its most important activites include transmutation doping of monocrystalline silicon ingots. In this process, the conductivity properties of silicon ingots is beeing improved. They are used in the manufacture of small semiconductor devices in electronics (diodes, microprocessors, ....) but also in the production of large photovoltaic panels. Transmutation doping advantage over other methods is relatively high degree of homogeneity of distribution transmuted impurities in the whole volume of the ingot. The article presents the basics of the process of transmutation doping, doping requirements for the process and way of its implementation in the LVR-15 reactor workplace."@en . "Transmuta\u010Dn\u00E9 dopovanie krem\u00EDku na pracovisku reaktora LVR-15" . "Horn\u00ED Lomn\u00E1" . . . . "978-80-01-05359-1" . "transmutation doping; monocrystalline silicon ingots; research reactors; LVR-15 reactor"@en . . . . "RIV/26722445:_____/13:#0000793!RIV14-MPO-26722445" . "Transmuta\u010Dn\u00E9 dopovanie krem\u00EDku na pracovisku reaktora LVR-15" . "\u0160olt\u00E9s, Jaroslav" . "[785EFFAC1301]" . "Transmutation doping of silicon at the LVR-15 research reactor"@en . . "Sborn\u00EDk p\u0159edn\u00E1\u0161ek studentsk\u00E9 v\u011Bdeck\u00E9 konference JuveMatter 2013" . "Kole\u0161ka, Michal" . "RIV/26722445:_____/13:#0000793" . . . . . . "\u010Cesk\u00E9 vysok\u00E9 u\u010Den\u00ED technick\u00E9-nakladatelstv\u00ED \u010CVUT" . "Vonkov\u00E1, Kate\u0159ina" . "111638" . "I" . "V\u00FDskumn\u00FD reaktor LVR-15 v Re\u017Ei s tepeln\u00FDm v\u00FDkonom 10 MW je reaktorom prioritne orientovan\u00FDm na materi\u00E1lov\u00FD v\u00FDskum a produkciu r\u00E1dionuklidov pre medic\u00EDnske a priemyseln\u00E9 \u00FA\u010Dely. Medzi najd\u00F4le\u017Eitej\u0161ie aktivity na pracovisku reaktora patr\u00ED transmuta\u010Dn\u00E9 dopovanie monokry\u0161talick\u00FDch krem\u00EDkov\u00FDch ingotov. V r\u00E1mci tohto procesu s\u00FA zlep\u0161ovan\u00E9 vodivostn\u00E9 vlastnosti krem\u00EDkov\u00FDch ingotov, ktor\u00E9 nach\u00E1dzaj\u00FA uplatnenie pri v\u00FDrobe mal\u00FDch polovodi\u010Dov\u00FDch s\u00FA\u010Diastok v elektronike (di\u00F3dy, mikroprocesory, ....) ale rovnako aj pri produkcii ve\u013Ek\u00FDch fotovoltick\u00FDch panelov. V\u00FDhodou transmuta\u010Dn\u00E9ho dopovania oproti in\u00FDm met\u00F3dam je relat\u00EDvne vysok\u00E1 miera homogenity distrib\u00FAcie transmutovanej pr\u00EDmesi v celom objeme ingotu. V \u010Dl\u00E1nku s\u00FA predstaven\u00E9 z\u00E1klady procesu transmuta\u010Dn\u00E9ho dopovania, po\u017Eiadavky na dopovac\u00ED proces a sp\u00F4sob jeho realiz\u00E1cie na pracovisku reaktora LVR-15 v Re\u017Ei." . "Praha" . . . . . "Transmutation doping of silicon at the LVR-15 research reactor"@en . "3"^^ . . .