"2"^^ . . "I, P(LO1203)" . "http://www.hutnickelisty.cz" . . "Stanoven\u00ED koncentrace prvk\u016F v z\u00E1vislosti na analyzovan\u00E9 hloubce s vyu\u017Eit\u00EDm techniky GDOES" . "2"^^ . "Falt\u00FDnkov\u00E1, Lenka" . . . "CZ - \u010Cesk\u00E1 republika" . . "RIV/25870807:_____/14:#0000360" . "6" . "47118" . . . . . "LXVII" . . "0018-8069" . "RIV/25870807:_____/14:#0000360!RIV15-MSM-25870807" . . "Stanoven\u00ED koncentrace prvk\u016F v z\u00E1vislosti na analyzovan\u00E9 hloubce s vyu\u017Eit\u00EDm techniky GDOES"@cs . "Hutnick\u00E9 listy" . "V posledn\u00EDch letech se v\u00FDzkum a v\u00FDvoj v oblasti p\u0159\u00EDpravy tenk\u00FDch oxidick\u00FDch vrstev a povlak\u016F modern\u00EDmi elektrochemick\u00FDmi, chemick\u00FDmi nebo fyzik\u00E1ln\u00EDmi technikami orientuje na zlep\u0161en\u00ED chemick\u00FDch a fyzik\u00E1ln\u00EDch vlastnost\u00ED povlakovan\u00FDch povrch\u016F za \u00FA\u010Delem dosa\u017Een\u00ED zv\u00FD\u0161en\u00ED jejich \u017Eivotnosti a funk\u010Dnosti pro dan\u00FD typ aplikace. Sou\u010D\u00E1st\u00ED po\u017Eadavk\u016F hodnocen\u00ED povrchov\u00FDch vrstev a povlak\u016F v z\u00E1vislosti na po\u017Eadovan\u00E9 kvalit\u011B zahrnuj\u00EDc\u00ED fyzik\u00E1ln\u011B, chemick\u00E9 a strukturn\u00ED vlastnosti je d\u016Fle\u017Eit\u00FD vhodn\u00FD v\u00FDb\u011Br analytick\u00FDch metod umo\u017E\u0148uj\u00EDc\u00ED komplexn\u00ED charakterizaci deponovan\u00FDch tenk\u00FDch vrstev. Kvantitativn\u00ED hloubkov\u00FD profil pro r\u016Fzn\u00E9 druhy povlak\u016F a tenk\u00E9 oxidick\u00E9 vrstvy je st\u00E1le \u010Dast\u011Bji identifikov\u00E1n s vyu\u017Eit\u00EDm techniky optick\u00E9 emisn\u00ED spektrometrie s buzen\u00EDm doutnav\u00FDch v\u00FDbojem (GDOES). Jej\u00ED v\u00FDhody jsou zejm\u00E9na spat\u0159ov\u00E1ny ve srovn\u00E1n\u00ED s technikami AES, SIMS, XPS, RBS v jedine\u010Dn\u00E9 kombinaci vysok\u00E9 odpra\u0161ovac\u00ED rychlosti, odpra\u0161ovac\u00ED hloubky, citlivosti metody, anal\u00FDzy nevodiv\u00FDch vrstev a snadn\u00E9 kvantifikaci lehk\u00FDch prvk\u016F (C, N, O, H). P\u0159edkl\u00E1dan\u00FD \u010Dl\u00E1nek shrnuje sou\u010Dasn\u00E9 aplikovan\u00E9 metody techniky GDOES umo\u017E\u0148uj\u00EDc\u00ED charakterizovat vlastnosti tenk\u00FDch vrstev a povlak\u016F s d\u016Frazem na mo\u017En\u00E9 vyu\u017Eit\u00ED v\u00FDsledk\u016F ve v\u00FDrobn\u00EDm pr\u016Fmyslu. Hloubkov\u00E9 koncentra\u010Dn\u00ED profily byly stanoveny u povlak\u016F p\u0159ipraven\u00FDch technikou CVD (chemical vapour deposition) a PVD (physical vapour deposition), nav\u00E1lcovan\u00E9 cladov\u00E9 vrstvy a tenk\u00E9 oxidick\u00E9 vrstvy vznikl\u00E9 p\u0159i v\u00E1lcov\u00E1n\u00ED za tepla a nedokonal\u00E9m procesu mo\u0159en\u00ED."@cs . . "Gabor, Roman" . "Stanoven\u00ED koncentrace prvk\u016F v z\u00E1vislosti na analyzovan\u00E9 hloubce s vyu\u017Eit\u00EDm techniky GDOES" . "V posledn\u00EDch letech se v\u00FDzkum a v\u00FDvoj v oblasti p\u0159\u00EDpravy tenk\u00FDch oxidick\u00FDch vrstev a povlak\u016F modern\u00EDmi elektrochemick\u00FDmi, chemick\u00FDmi nebo fyzik\u00E1ln\u00EDmi technikami orientuje na zlep\u0161en\u00ED chemick\u00FDch a fyzik\u00E1ln\u00EDch vlastnost\u00ED povlakovan\u00FDch povrch\u016F za \u00FA\u010Delem dosa\u017Een\u00ED zv\u00FD\u0161en\u00ED jejich \u017Eivotnosti a funk\u010Dnosti pro dan\u00FD typ aplikace. Sou\u010D\u00E1st\u00ED po\u017Eadavk\u016F hodnocen\u00ED povrchov\u00FDch vrstev a povlak\u016F v z\u00E1vislosti na po\u017Eadovan\u00E9 kvalit\u011B zahrnuj\u00EDc\u00ED fyzik\u00E1ln\u011B, chemick\u00E9 a strukturn\u00ED vlastnosti je d\u016Fle\u017Eit\u00FD vhodn\u00FD v\u00FDb\u011Br analytick\u00FDch metod umo\u017E\u0148uj\u00EDc\u00ED komplexn\u00ED charakterizaci deponovan\u00FDch tenk\u00FDch vrstev. Kvantitativn\u00ED hloubkov\u00FD profil pro r\u016Fzn\u00E9 druhy povlak\u016F a tenk\u00E9 oxidick\u00E9 vrstvy je st\u00E1le \u010Dast\u011Bji identifikov\u00E1n s vyu\u017Eit\u00EDm techniky optick\u00E9 emisn\u00ED spektrometrie s buzen\u00EDm doutnav\u00FDch v\u00FDbojem (GDOES). Jej\u00ED v\u00FDhody jsou zejm\u00E9na spat\u0159ov\u00E1ny ve srovn\u00E1n\u00ED s technikami AES, SIMS, XPS, RBS v jedine\u010Dn\u00E9 kombinaci vysok\u00E9 odpra\u0161ovac\u00ED rychlosti, odpra\u0161ovac\u00ED hloubky, citlivosti metody, anal\u00FDzy nevodiv\u00FDch vrstev a snadn\u00E9 kvantifikaci lehk\u00FDch prvk\u016F (C, N, O, H). P\u0159edkl\u00E1dan\u00FD \u010Dl\u00E1nek shrnuje sou\u010Dasn\u00E9 aplikovan\u00E9 metody techniky GDOES umo\u017E\u0148uj\u00EDc\u00ED charakterizovat vlastnosti tenk\u00FDch vrstev a povlak\u016F s d\u016Frazem na mo\u017En\u00E9 vyu\u017Eit\u00ED v\u00FDsledk\u016F ve v\u00FDrobn\u00EDm pr\u016Fmyslu. Hloubkov\u00E9 koncentra\u010Dn\u00ED profily byly stanoveny u povlak\u016F p\u0159ipraven\u00FDch technikou CVD (chemical vapour deposition) a PVD (physical vapour deposition), nav\u00E1lcovan\u00E9 cladov\u00E9 vrstvy a tenk\u00E9 oxidick\u00E9 vrstvy vznikl\u00E9 p\u0159i v\u00E1lcov\u00E1n\u00ED za tepla a nedokonal\u00E9m procesu mo\u0159en\u00ED." . "4"^^ . "[B147B792C6F8]" . "Determination of elemental concentration in dependence on analysed depth with utilization of GDOES technique"@en . . "Stanoven\u00ED koncentrace prvk\u016F v z\u00E1vislosti na analyzovan\u00E9 hloubce s vyu\u017Eit\u00EDm techniky GDOES"@cs . . "Research and development in the sphere of preparation of thin oxide layers and coatings by advanced electrochemical, chemical or physical techniques has been focusing for improving of chemical and physical nature of coated surfaces in recent years in order to achieve the increasing of their lifetime and utility for the exist type of application. The suitable choice of analytical methods enabling the comprehensive characterization of deposited thin layers is important part of requirements for evaluation of surface layers and coatings in the dependence on the desired quality incl. physico-chemical and structural properties. Glow discharge optical emission spectrometry (GDOES) is suitable method for the determination of chemical composition of surface layers for various types of metallic materials. GDOES technique allows to perform profile element analysis e.g. for analysis of various types of coatings and layers. The quantitative depth profile for various kinds of coatings and thin oxide layer is still more often identified with the utilization of glow discharge optical emission spectrometry. Advantages of this method consist especially in the unique combination of high sputtering rate, sputtering depth, sensitivity of the method, analysis of non-conductive layers and easy quantification of light metals (C, N, O, H) as compared with Auger electron spectroscopy (AES), Secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS). Submitted paper summarises current applied methods of GDOES technique susceptible to characterize the properties of thin layers and coatings forcefully on the possibility of application in industrial use. Depth concentration profiles were determined in case of coatings prepared by techniques CVD (chemical vapour deposition) and PVD (physical vapour deposition), rolled clad layer and thin oxide layer originated in hot rolling and incomplete pickling process"@en . "Determination of elemental concentration in dependence on analysed depth with utilization of GDOES technique"@en . "GDOES quantitative depth profile thin oxid+e layer CVD coating PVD coating clad layer"@en . .