"39520" . . . "P\u0159\u00EDpravek pro m\u011B\u0159en\u00ED radia\u010Dn\u00EDch zm\u011Bn teplotn\u00ED z\u00E1vislosti PMOS tranzistor\u016F" . . "A prototype of test jig for evaluation of radiation induced changes of PMOS transistors threshold voltage temperature coefficient has been built and initial successful experiments have been completed. While the transistor characterization is fully automated, the control of transistors temperature is manual. It has been demonstrated that the gamma radiation can induce serious changes to the transistor temperature coefficients and these changes are also a function of the transistor bias voltage during the irradiation."@en . "[5179435FFD11]" . "P\u0159\u00EDpravek pro m\u011B\u0159en\u00ED radia\u010Dn\u00EDch zm\u011Bn teplotn\u00ED z\u00E1vislosti PMOS tranzistor\u016F"@cs . . . . . "RIV/00216305:26220/14:PR27798" . . . . "H\u00E1ze, Ji\u0159\u00ED" . "Test jig for evaluation of radiation induced changes of PMOS transistors temperature coefficients"@en . . . "RIV/00216305:26220/14:PR27798!RIV15-MSM-26220___" . "Hofman, Ji\u0159\u00ED" . . "S" . . . "50000 K\u010D" . . "Byl navr\u017Een a realizov\u00E1n prototyp poloautomatick\u00E9ho testu radia\u010Dn\u00EDch zm\u011Bn (degradac\u00ED) teplotn\u00ED z\u00E1vislosti prahov\u00E9ho nap\u011Bt\u00ED PMOS tranzistor\u016F a byly provedeny prvotn\u00ED \u00FAsp\u011B\u0161n\u00E9 experimenty. Zat\u00EDmco m\u011B\u0159en\u00ED charakteristiky PMOS prob\u00EDhalo pln\u011B automaticky, teplota tranzistor\u016F byla \u0159\u00EDzena manu\u00E1ln\u011B. Poda\u0159ilo se prok\u00E1zat, \u017Ee radiace zp\u016Fsobuje v\u00FDrazn\u00E9 zm\u011Bny teplotn\u00EDch koeficient\u016F tranzistor\u016F a \u017Ee tyto zm\u011Bny jsou tak\u00E9 siln\u011B z\u00E1visl\u00E9 na nap\u00E1jen\u00ED tranzistor\u016F b\u011Bhem jejich oza\u0159ov\u00E1n\u00ED." . "26220" . . "P\u0159\u00EDpravek pro m\u011B\u0159en\u00ED radia\u010Dn\u00EDch zm\u011Bn teplotn\u00ED z\u00E1vislosti PMOS tranzistor\u016F" . "RaTran.v01" . . . "http://www.umel.feec.vutbr.cz/vyzkum/vysledky/funkcni-vzorky/" . "Byl navr\u017Een a realizov\u00E1n prototyp poloautomatick\u00E9ho testu radia\u010Dn\u00EDch zm\u011Bn (degradac\u00ED) teplotn\u00ED z\u00E1vislosti prahov\u00E9ho nap\u011Bt\u00ED PMOS tranzistor\u016F a byly provedeny prvotn\u00ED \u00FAsp\u011B\u0161n\u00E9 experimenty. Zat\u00EDmco m\u011B\u0159en\u00ED charakteristiky PMOS prob\u00EDhalo pln\u011B automaticky, teplota tranzistor\u016F byla \u0159\u00EDzena manu\u00E1ln\u011B. Poda\u0159ilo se prok\u00E1zat, \u017Ee radiace zp\u016Fsobuje v\u00FDrazn\u00E9 zm\u011Bny teplotn\u00EDch koeficient\u016F tranzistor\u016F a \u017Ee tyto zm\u011Bny jsou tak\u00E9 siln\u011B z\u00E1visl\u00E9 na nap\u00E1jen\u00ED tranzistor\u016F b\u011Bhem jejich oza\u0159ov\u00E1n\u00ED."@cs . "P\u0159\u00EDpravek pro m\u011B\u0159en\u00ED radia\u010Dn\u00EDch zm\u011Bn teplotn\u00ED z\u00E1vislosti PMOS tranzistor\u016F"@cs . . "Maximaln\u00ED celkov\u00E1 d\u00E1vka (Co60) : 1Mrad, Rozsah m25en9 Vth: 0 a6 200V, Teplotn\u00ED rozsah: -30 a\u017E 100C" . "2"^^ . "transistor, MOS, threshold voltage, temperature dependency, gamma radiation"@en . "2"^^ . . "Test jig for evaluation of radiation induced changes of PMOS transistors temperature coefficients"@en .