"RTS noise, trap, GaN, InGaAs"@en . "Proceedings of 8th solid state surfaces and interfaces" . . "5"^^ . "RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated." . . . "S" . . . "Dallaeva, Dinara" . . "Bratislava" . . . . . . "6"^^ . "Noise sources in interface between mono-crystalline and amorphous semiconductors" . "2013-11-18+01:00"^^ . "RIV/00216305:26220/13:PU106162!RIV14-MSM-26220___" . . "Dallaeva, Dinara" . . . . . "Pavelka, Jan" . "91889" . "Chv\u00E1tal, Milo\u0161" . "978-80-223-3501-0" . "[39B5E4C9F353]" . . "26220" . . "Noise sources in interface between mono-crystalline and amorphous semiconductors"@en . "2"^^ . "Tacano, Munecazu" . "RIV/00216305:26220/13:PU106162" . . "Univerzita Komensk\u00E9ho v Bratislave" . "\u0160ikula, Josef" . "Noise sources in interface between mono-crystalline and amorphous semiconductors" . "Grmela, Lubom\u00EDr" . . "RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated."@en . "Noise sources in interface between mono-crystalline and amorphous semiconductors"@en . "Snolenice" .