"978-80-223-3501-0" . . "Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects." . "9"^^ . "Univerzita Komensk\u00E9ho v Bratislave" . . "Tom\u00E1nek, Pavel" . . "88247" . "8"^^ . . . "Dallaeva, Dinara" . . "2013-11-18+01:00"^^ . "Mack\u016F, Robert" . . . "P(ED1.1.00/02.0068), P(GAP102/11/0995), P(LH11060)" . . . "[B9C7D0E7025E]" . . . "Proceedings of 8th Solid state surfaces and intefaces" . . . "Grmela, Lubom\u00EDr" . . "2"^^ . . . . "Koktav\u00FD, Pavel" . . "\u0160icner, Ji\u0159\u00ED" . "RIV/00216305:26220/13:PU106135" . "Smith, Steve J." . . "Microstructure defects in silicon solar cells"@en . "RIV/00216305:26220/13:PU106135!RIV14-GA0-26220___" . "Dallaeva, Dinara" . . "Microstructure defects in silicon solar cells"@en . . . "Snolenice" . . "Microstructure defects in silicon solar cells" . . "Bratislava" . . "Microstructure defects in silicon solar cells" . "solar cell, silicon, defect, inhomogeneity, breakdown, microsctructure, measurement"@en . "26220" . . "\u0160karvada, Pavel" . "Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects."@en . "Vondra, Marek" . . .