"Va\u0161\u00ED\u010Dek, Adam" . "Rychl\u00FD budi\u010D tranzistor\u016F SiC MOSFET a IGBT" . "[40AEE20DC820]" . . . "RIV/00216305:26220/13:PR27108" . . "103819" . "P(ED0014/01/01), S" . . . . . "SiC,MOSFET,IGBT,gate driver,DC/DC,resonant"@en . . "Rychl\u00FD budi\u010D tranzistor\u016F SiC MOSFET a IGBT"@cs . "Rychl\u00FD budi\u010D tranzistor\u016F SiC MOSFET a IGBT"@cs . "The GD001 gate driver galvanically isolates control circuits from the switching power stage. The controlled devices could be either SiC MOSFET, IGBT or Si MOSFET. Output current is up to 4A peak. Small resonant DC/DC power converter ensures the galvanic isolation of the supply voltage. When compared to any of the commercially available gate drivers, the GD001 gate driver allows much higher switching frequencies (up to 2MHz). Exceptionally low coupling capacitance enables reaching very high voltage change steepness (dV/dt) across the isolation barrier."@en . "Nap\u00E1jec\u00ED nap\u011Bt\u00ED 15V +-2V Maxim\u00E1ln\u00ED p\u0159\u00EDkon 2W Pracovn\u00ED kmito\u010Det budi\u010De 0-2MHz \u0160pi\u010Dkov\u00FD v\u00FDstupn\u00ED proud a\u017E 4A Odolnost dU/dt minim\u00E1ln\u011B 50kV/us Rozm\u011Bry 81x30x8 mm" . . . "Na rozd\u00EDl od existuj\u00EDc\u00EDch \u0159e\u0161en\u00ED umo\u017En\u00ED bez probl\u00E9m\u016F dos\u00E1hnout vysok\u00FDch sp\u00EDnac\u00EDch kmito\u010Dt\u016F za p\u0159ijatelnou cenu." . "GD001" . "Pato\u010Dka, Miroslav" . "2"^^ . . . "Rychl\u00FD budi\u010D tranzistor\u016F SiC MOSFET a IGBT" . . . "2"^^ . . . . . . . "Fast operating SiC MOSFET or IGBT gate driver"@en . . "Budi\u010D GD001 zaji\u0161\u0165uje galvanick\u00E9 odd\u011Blen\u00ED \u0159\u00EDdic\u00EDch obvod\u016F od sp\u00EDnac\u00EDch prvk\u016F. T\u011Bmi mohou b\u00FDt tranzistory SiC MOSFET (z perspektivn\u00EDho karbidu k\u0159em\u00EDku), IGBT nebo klasick\u00E9 Si MOSFET. V\u00FDstup budi\u010De je dimenzov\u00E1n na \u0161pi\u010Dkov\u00FD proud a\u017E 4A. Galvanick\u00E9 odd\u011Blen\u00ED nap\u00E1jec\u00EDho nap\u011Bt\u00ED budi\u010De zaji\u0161\u0165uje rezonan\u010Dn\u00ED DC/DC m\u011Bni\u010D mal\u00E9ho v\u00FDkonu. Na rozd\u00EDl od komer\u010Dn\u011B dostupn\u00FDch budi\u010D\u016F umo\u017E\u0148uje budi\u010D GD001 dosa\u017Een\u00ED podstatn\u011B vy\u0161\u0161\u00EDch sp\u00EDnac\u00EDch kmito\u010D\u016F - a\u017E 2 MHz. Velmi mal\u00E1 parazin\u00ED vazebn\u00ED kapacita izola\u010Dn\u00ED bari\u00E9ry d\u00E1le umo\u017E\u0148uje dosa\u017Een\u00ED velmi vysok\u00E9 strmosti zm\u011Bny nap\u011Bt\u00ED na izola\u010Dn\u00ED bari\u00E9\u0159e (dU/dt)." . . "RIV/00216305:26220/13:PR27108!RIV15-MSM-26220___" . . "Fast operating SiC MOSFET or IGBT gate driver"@en . "http://www.uvee.feec.vutbr.cz/fvzorky" . "Budi\u010D GD001 zaji\u0161\u0165uje galvanick\u00E9 odd\u011Blen\u00ED \u0159\u00EDdic\u00EDch obvod\u016F od sp\u00EDnac\u00EDch prvk\u016F. T\u011Bmi mohou b\u00FDt tranzistory SiC MOSFET (z perspektivn\u00EDho karbidu k\u0159em\u00EDku), IGBT nebo klasick\u00E9 Si MOSFET. V\u00FDstup budi\u010De je dimenzov\u00E1n na \u0161pi\u010Dkov\u00FD proud a\u017E 4A. Galvanick\u00E9 odd\u011Blen\u00ED nap\u00E1jec\u00EDho nap\u011Bt\u00ED budi\u010De zaji\u0161\u0165uje rezonan\u010Dn\u00ED DC/DC m\u011Bni\u010D mal\u00E9ho v\u00FDkonu. Na rozd\u00EDl od komer\u010Dn\u011B dostupn\u00FDch budi\u010D\u016F umo\u017E\u0148uje budi\u010D GD001 dosa\u017Een\u00ED podstatn\u011B vy\u0161\u0161\u00EDch sp\u00EDnac\u00EDch kmito\u010D\u016F - a\u017E 2 MHz. Velmi mal\u00E1 parazin\u00ED vazebn\u00ED kapacita izola\u010Dn\u00ED bari\u00E9ry d\u00E1le umo\u017E\u0148uje dosa\u017Een\u00ED velmi vysok\u00E9 strmosti zm\u011Bny nap\u011Bt\u00ED na izola\u010Dn\u00ED bari\u00E9\u0159e (dU/dt)."@cs . . "26220" .