. . "26220" . "Dallaeva, Dinara" . . . . "Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target" . "RIV/00216305:26220/12:PU99134" . . "Vysoke uceni technicke v Brne" . "5"^^ . . "ion-plasma sputtering, sputtering velocity, growth rate, ion energy"@en . "1"^^ . . "Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target"@en . "P(ED2.1.00/03.0072), P(GAP102/11/0995)" . . . . "Kardashova, Gulnara" . "Dallaeva, Dinara" . "2012-06-28+02:00"^^ . "RIV/00216305:26220/12:PU99134!RIV13-GA0-26220___" . . . "This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account." . "[36DD2FA4AC8B]" . "Bilalov, Bilal" . "Brno" . . "This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account."@en . "Arkhipov, Alexandr" . . . "Tom\u00E1nek, Pavel" . "Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target" . "IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings." . . "Safaraliev, Gadjimet" . . "LITERA, Tabor 43a, 61200 Brno" . "978-80-214-4539-0" . "7"^^ . "Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target"@en . "142938" .