"Morphology and structural investigation of silicon carbide layers formated by sublimation" . "structural properties, lattice perfection, epilayer, substrate, epitaxy"@en . "LITERA Brno, Tabor 43a, 612 00 Brno" . . . . "1"^^ . . "Dallaeva, Dinara" . . "Morphology and structural investigation of silicon carbide layers formated by sublimation"@en . "1"^^ . "Dallaeva, Dinara" . "Morphology and structural investigation of silicon carbide layers formated by sublimation" . "RIV/00216305:26220/12:PU98332!RIV13-GA0-26220___" . . "P(ED2.1.00/03.0072), P(GAP102/11/0995), P(LH11060)" . "Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions." . "RIV/00216305:26220/12:PU98332" . "5"^^ . "151848" . "Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions."@en . . . "2012-04-26+02:00"^^ . "[A4D58A9DE74B]" . . . . . . . . "Brno" . "Brno" . . . . "Morphology and structural investigation of silicon carbide layers formated by sublimation"@en . . "Proceedings of the 18th Conference STUDENT EEICT, vol. 3" . "26220" . . "978-80-214-4462-1" .