"Proch\u00E1zka, Petr" . . . . . "2"^^ . "Proceedings of the 13th Internationnal Scientific Conference Electric Power Engineering 2012, Volume 1" . "26220" . "Paper gives closer prospection of new technologies of switching devices used in power electronic and describes their expected benefits in power conversion systems (motors, converters, electric sources, smart-grid systems). Semiconductor technologies ased on Silicon Carbide \u201ESiC\u201C or Gallium Nitride are new technologies significantly improving static and dynamic parameters of the switching devices. SiC transistors and their behavior is very similar to conventional MOSFET Si transistor. But in many parameters re superior in comparison to Si transistors and improve than the efficiency of the power devices and the whole energy systems. Huge benefit is their breakdown voltage shifted up to 1200V and more in the near future. This allows their use in 3 phase supply stems which make up majority of the realized industrial application. Short switching and recovery times and allow shift switching frequency of the converters over 100kHz. High switching frequencies generally reduce weight and volume of the h"@en . . "5"^^ . . "SiC a GaN polovodi\u010Dov\u00E9 technologie jsou nejslibn\u011Bj\u0161\u00ED budouc\u00ED technologie sp\u00EDnac\u00EDch sou\u010D\u00E1stek v oblasti v\u00FDkonov\u00E9 elektroniky. Velikost intenzity elektrick\u00E9ho pole p\u0159i pr\u016Frazu je a\u017E desetin\u00E1sobn\u011B vy\u0161\u0161\u00ED ne\u017E u klasick\u00FDch Si technologi\u00ED. Prvn\u00ED existuj\u00EDc\u00ED komer\u010Dn\u00ED v\u00FDkonov\u00E9 polovodi\u010De ji\u017E dosahuj\u00ED z\u00E1v\u011Brn\u00FDch nap\u011Bt\u00ED a\u017E 1700 V. Ve v\u00FDvoji jsou ji\u017E polovodi\u010De se z\u00E1v\u011Brn\u00FDm nap\u011Bt\u00EDm a\u017E 10 kV. D\u00EDky vysok\u00E9 hodnot\u011B z\u00E1v\u011Brn\u00E9ho nap\u011Bt\u00ED lze zkr\u00E1tit substr\u00E1tovou vrstvu a doc\u00EDlit tak mal\u00E9ho odporu kan\u00E1lu. Odpor kan\u00E1lu nav\u00EDc nejm\u00E9n\u011B oste s teplotou. Nov\u00E9 polovodi\u010De jsou schopn\u00E9 pracovat s teplotou p\u0159echodu p\u0159es 300 C. Takto extr\u00E9mn\u011B vysok\u00E9 teploty dovoluj\u00ED ni\u017E\u0161\u00ED hmotnosti a objemy chlad\u00EDc\u00EDch soustav a t\u00EDm i v\u00FDraznou \u00FAsporu v\u00FDrobn\u00EDch n\u00E1klad\u016F. Vysok\u00E9 hodnoty elektronov\u00E9 pohyblivost\u00ED umo\u017E\u0148uj\u00ED sp\u00EDnac\u00ED frekvence daleko za 100 kHz i p\u0159i vysok\u00E9m nap\u011Bt\u00ED (>1 kV) a n\u00EDzk\u00E9 p\u0159ep\u00EDnac\u00ED ztr\u00E1ty. Z n\u011Bkolika m\u011B\u0159en\u00ED elektromagnetick\u00E9 komp" . . "Utilization SiC and GaN technology in modern systems for energy conversion"@en . "http://www.epe-conference.eu" . "Vysok\u00E9 u\u010Den\u00ED technick\u00E9 v Brn\u011B" . "Vyu\u017Eit\u00ED SiC a GaN technologi\u00ED v modern\u00EDch syst\u00E9mech pro p\u0159em\u011Bnu energie"@cs . . "Brno" . "Brno" . . . . "Vyu\u017Eit\u00ED SiC a GaN technologi\u00ED v modern\u00EDch syst\u00E9mech pro p\u0159em\u011Bnu energie" . "Vyu\u017Eit\u00ED SiC a GaN technologi\u00ED v modern\u00EDch syst\u00E9mech pro p\u0159em\u011Bnu energie"@cs . "179691" . "Pazdera, Ivo" . "[ABA3C74C5D9D]" . "P(ED0014/01/01), P(FR-TI1/061), S" . . "SiC a GaN polovodi\u010Dov\u00E9 technologie jsou nejslibn\u011Bj\u0161\u00ED budouc\u00ED technologie sp\u00EDnac\u00EDch sou\u010D\u00E1stek v oblasti v\u00FDkonov\u00E9 elektroniky. Velikost intenzity elektrick\u00E9ho pole p\u0159i pr\u016Frazu je a\u017E desetin\u00E1sobn\u011B vy\u0161\u0161\u00ED ne\u017E u klasick\u00FDch Si technologi\u00ED. Prvn\u00ED existuj\u00EDc\u00ED komer\u010Dn\u00ED v\u00FDkonov\u00E9 polovodi\u010De ji\u017E dosahuj\u00ED z\u00E1v\u011Brn\u00FDch nap\u011Bt\u00ED a\u017E 1700 V. Ve v\u00FDvoji jsou ji\u017E polovodi\u010De se z\u00E1v\u011Brn\u00FDm nap\u011Bt\u00EDm a\u017E 10 kV. D\u00EDky vysok\u00E9 hodnot\u011B z\u00E1v\u011Brn\u00E9ho nap\u011Bt\u00ED lze zkr\u00E1tit substr\u00E1tovou vrstvu a doc\u00EDlit tak mal\u00E9ho odporu kan\u00E1lu. Odpor kan\u00E1lu nav\u00EDc nejm\u00E9n\u011B oste s teplotou. Nov\u00E9 polovodi\u010De jsou schopn\u00E9 pracovat s teplotou p\u0159echodu p\u0159es 300 C. Takto extr\u00E9mn\u011B vysok\u00E9 teploty dovoluj\u00ED ni\u017E\u0161\u00ED hmotnosti a objemy chlad\u00EDc\u00EDch soustav a t\u00EDm i v\u00FDraznou \u00FAsporu v\u00FDrobn\u00EDch n\u00E1klad\u016F. Vysok\u00E9 hodnoty elektronov\u00E9 pohyblivost\u00ED umo\u017E\u0148uj\u00ED sp\u00EDnac\u00ED frekvence daleko za 100 kHz i p\u0159i vysok\u00E9m nap\u011Bt\u00ED (>1 kV) a n\u00EDzk\u00E9 p\u0159ep\u00EDnac\u00ED ztr\u00E1ty. Z n\u011Bkolika m\u011B\u0159en\u00ED elektromagnetick\u00E9 komp"@cs . . . . "2012-05-23+02:00"^^ . "RIV/00216305:26220/12:PU100568" . "Vyu\u017Eit\u00ED SiC a GaN technologi\u00ED v modern\u00EDch syst\u00E9mech pro p\u0159em\u011Bnu energie" . . "SiC transistors, High switching frequency"@en . . "978-80-214-4514-7" . "Utilization SiC and GaN technology in modern systems for energy conversion"@en . . . "2"^^ . "RIV/00216305:26220/12:PU100568!RIV13-MPO-26220___" .