"Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature range from 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterized by the presenc" . . "4"^^ . "Kopeck\u00FD, Martin" . "\u0160ikula, Josef" . "2011-10-10+02:00"^^ . . "Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors"@en . . . "P(GA102/09/1920), Z(MSM0021630503)" . "Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors" . . "Sedl\u00E1kov\u00E1, Vlasta" . "Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature range from 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterized by the presenc"@en . . "Electronic Components Industry Association ECIA" . . . "CARTS EUROPE 2011 PROCEEDING" . . "RIV/00216305:26220/11:PU95271" . . "RIV/00216305:26220/11:PU95271!RIV12-MSM-26220___" . "26220" . . "Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors"@en . . "[151A7FD7EAF1]" . "ion diffusion, field crystalization, NbO"@en . . "0-7908-0155-8" . . "Nice" . . "Nice, France" . . . "Navarov\u00E1, Hana" . . . "Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors" . "205787" . "5"^^ . . . . "9"^^ . "Zedn\u00ED\u010Dek, Tom\u00E1\u0161" .