"1"^^ . . . "TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS" . . . . "4"^^ . "2011-04-28+02:00"^^ . . "Kopeck\u00FD, Martin" . . . "RIV/00216305:26220/11:PU93448!RIV12-MSM-26220___" . "nam. Republiky 15 614 00 Brno" . . . "234593" . "TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS"@en . "P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)" . . "[E029FCEDF797]" . . . . . . . . "RIV/00216305:26220/11:PU93448" . "26220" . "The paper has focused on analysis of noise measurement in Ta2O5 insulating films. Tan-talum pent-oxide thin films are used as dielectric layers for capacitors. Tantalum capacitors show high relative permittivity, low leakage current density and high reliability. The capacitor is here presented as a MIS structure where cathode is formed by manganese-dioxide (with semiconductor conductivity) and anode is formed by tantalum (with metal conductivity). Capacitor is operated in normal mode when the anode is positive and in reverse mode when the cathode is positive. The measurement set-up allows the low frequency noise and capacity measurements in the wide tem-perature range. The Ta2O5 films of the thickness about 28 nm were examined. The current noise spectral density was analyzed for the temperature range from 10 to 400 K. GR noise and 1/fa noise are observed in the low frequency region with exponent a varying between 1 and 1.5. From the measurement of sample capacity for different temperatures it follows,"@en . . "978-80-214-4079-1" . . "tantalum, 1/f noise, Ta2O5, GR noise"@en . "1"^^ . "The paper has focused on analysis of noise measurement in Ta2O5 insulating films. Tan-talum pent-oxide thin films are used as dielectric layers for capacitors. Tantalum capacitors show high relative permittivity, low leakage current density and high reliability. The capacitor is here presented as a MIS structure where cathode is formed by manganese-dioxide (with semiconductor conductivity) and anode is formed by tantalum (with metal conductivity). Capacitor is operated in normal mode when the anode is positive and in reverse mode when the cathode is positive. The measurement set-up allows the low frequency noise and capacity measurements in the wide tem-perature range. The Ta2O5 films of the thickness about 28 nm were examined. The current noise spectral density was analyzed for the temperature range from 10 to 400 K. GR noise and 1/fa noise are observed in the low frequency region with exponent a varying between 1 and 1.5. From the measurement of sample capacity for different temperatures it follows," . "Brno" . "NOVPRESS s.r.o." . . "TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS"@en . "TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS" . "PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010" .