"GRT model , MOSFET , RTS noise , capture time constant , emission time constant"@en . . . "6"^^ . . "P(GA102/08/0260), P(GA102/09/1920), Z(MSM0021630503)" . . "Model for rts noise in submicron mosfets"@cs . "RIV/00216305:26220/10:PU90266" . "Model for rts noise in submicron mosfets"@cs . "\u0160ikula, Josef" . . . "Sedl\u00E1kov\u00E1, Vlasta" . . . . "26220" . "Model for rts noise in submicron mosfets"@en . "Model for RTS noise in submicron MOSFETS" . "[55F0F0AE4DD7]" . "271780" . . "Pavelka, Jan" . . "IEEE Explore Digital Library" . . . . "Kopeck\u00FD, Martin" . . "Neuveden" . . "The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position."@cs . . . "Model for rts noise in submicron mosfets" . . . . . "Model for rts noise in submicron mosfets" . . "The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position."@en . "Chv\u00E1tal, Milo\u0161" . "RIV/00216305:26220/10:PU90266!RIV11-GA0-26220___" . "978-1-4244-8182-8" . "Model for rts noise in submicron mosfets"@en . "Gda\u0144sk" . "Navarov\u00E1, Hana" . "6"^^ . "4"^^ . . "The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position." . . . "2010-06-28+02:00"^^ .