. "2010-11-10+01:00"^^ . . "8"^^ . "Zedn\u00ED\u010Dek, Tom\u00E1\u0161" . "10"^^ . "8"^^ . "Kopeck\u00FD, Martin" . "The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-3), rise during"@en . . "P(GA102/09/1920), P(KAN401770651), Z(MSM0021630503)" . . "268069" . . . "Biler, Martin" . . . . "The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-3), rise during" . . . "Munich" . . . . . "Electronic Components Association" . "RIV/00216305:26220/10:PU89316!RIV11-GA0-26220___" . "26220" . . "Leakage Current, Quantum Effects, Tantalum, Capacitors, Ta"@en . . "Chv\u00E1tal, Milo\u0161" . "Munich, Germany" . "0-7908-0151-5" . "RIV/00216305:26220/10:PU89316" . . . . . "CARTS Europe 2010" . . "Leakage Current and Quantum Effects in Tantalum Capacitors" . "Ne\u0161p\u016Frek, Stanislav" . . . "Navarov\u00E1, Hana" . . . "[1C6D92E991B9]" . "Leakage Current and Quantum Effects in Tantalum Capacitors"@en . . "Leakage Current and Quantum Effects in Tantalum Capacitors" . "Sedl\u00E1kov\u00E1, Vlasta" . "\u0160ikula, Josef" . . "Leakage Current and Quantum Effects in Tantalum Capacitors"@en .