"2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Volume 1" . . . . "2010-10-17+02:00"^^ . "IEEE" . "Pavelka, Jan" . . . . "26220" . . . . . . "Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components" . "Chv\u00E1tal, Milo\u0161" . . "Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components"@en . "4"^^ . "RIV/00216305:26220/10:PU88547" . . "Kopeck\u00FD, Martin" . . . . "Clearance Center 222 Rosewood Drive Danvers MA 0" . "4"^^ . "Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components"@en . . "West Lafayette, IN" . . . . . "4"^^ . "[732D87D9284D]" . "MOSFET, charge transport, RTS noise, time capture"@en . "RIV/00216305:26220/10:PU88547!RIV11-GA0-26220___" . "P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)" . "Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components" . "This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capture time constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha"@en . . "0084-9162" . . "253912" . "Sedl\u00E1kov\u00E1, Vlasta" . "This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capture time constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha" .