. "Grmela, Lubom\u00EDr" . "2"^^ . . . "26220" . . "Acta Electrotechnica et Informatica" . . . . "2"^^ . . "Silicon-silicon dioxide nanostructure in electrostatic field"@en . "[FD7FB1E47504]" . . . "SK - Slovensk\u00E1 republika" . . . "nanostructure, Si-SiO2 quantum dot, discharging bias, poisson-Schr\u00F6dinger numerical analysis, Comsol Multiphysics"@en . "Silicon-silicon dioxide nanostructure in electrostatic field" . "RIV/00216305:26220/10:PU88023!RIV11-GA0-26220___" . "RIV/00216305:26220/10:PU88023" . "3" . . "Silicon-silicon dioxide nanostructure in electrostatic field"@en . "287291" . . "P(GA102/07/0113), Z(MSM0021630503)" . . "10" . "1335-8243" . "Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application." . . . . . "Hru\u0161ka, Pavel" . "Silicon-silicon dioxide nanostructure in electrostatic field" . "4"^^ . . "Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application."@en .