. "The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis." . "Kopeck\u00FD, Martin" . . . "2010-05-12+02:00"^^ . . "Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors" . . . "RIV/00216305:26220/10:PU86946!RIV11-GA0-26220___" . "Piotr Firek, Ryszard Kisiel" . . "Polymer Electronics and Nanotechnologies: towards System Integration" . "Koszykowa 75 00 662 Warsaw Poland" . "978-83-7207-874-2" . . "256759" . "[736774D14B77]" . "26220" . "Tantalum Capacitor, Thin Film, Leakage current, Ta205"@en . "Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors"@en . . . . . . . . "Sedl\u00E1kov\u00E1, Vlasta" . "3"^^ . "Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors"@en . . . . "RIV/00216305:26220/10:PU86946" . . "Warsaw" . "P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)" . "3"^^ . . "The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis."@en . "Chv\u00E1tal, Milo\u0161" . "Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors" . . . "3"^^ .