. "[DA6980FBF266]" . "1"^^ . . . "Tantalum Capacitor, Thin Film, Leakage current, Ta205"@en . "ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS" . . "FEKT VUT v Brn\u011B" . "RIV/00216305:26220/10:PU86945" . "RIV/00216305:26220/10:PU86945!RIV11-GA0-26220___" . . . "Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2 MV/cm at temperature lower then 200 K."@en . "26220" . "1"^^ . . "P(GA102/09/1920), Z(MSM0021630503)" . . "PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010" . "Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2 MV/cm at temperature lower then 200 K." . . . "2010-04-29+02:00"^^ . . . . "nam. Republiky 15 614 00 Brno" . . . "256760" . "978-80-214-4079-1" . . "NOVPRESS s.r.o." . . "ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS" . "ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS"@en . "4"^^ . . "ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS"@en . . "Kopeck\u00FD, Martin" .