"[29F624B8B640]" . . . . . "RIV/00216305:26220/10:PU86944" . "Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs"@en . "978-83-7207-874-2" . "Piotr Firek, Ryszard Kisiel" . "Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs" . "Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs" . "3"^^ . "26220" . "Koszykowa 75 00 662 Warsaw Poland" . "Polymer Electronics and Nanotechnologies: towards System Integration" . "Pavelka, Jan" . "Electron Density, RTS Noise, 1/f noise, Cryogenic Measurement, MOSFET"@en . . "3"^^ . "\u0160ikula, Josef" . . "Kyoto" . . . "P(GD102/09/H074), Z(MSM0021630503)" . . . "We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature."@en . "256749" . "2010-08-01+02:00"^^ . "2"^^ . . "Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs"@en . . "We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature." . . . . . "Chv\u00E1tal, Milo\u0161" . . . "RIV/00216305:26220/10:PU86944!RIV11-GA0-26220___" . . . . .