. "Measurements and Theoretical Approximations of VA Characteristics MOSFETs"@en . . "Kn\u00E1pek, Alexandr" . . "Measurements and Theoretical Approximations of VA Characteristics MOSFETs" . . . "RIV/00216305:26220/09:PU83429!RIV10-MSM-26220___" . "VA characteristic, MOSFET, electron density, diffusion current, drift current"@en . "Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode."@en . "CZ - \u010Cesk\u00E1 republika" . "Jemn\u00E1 mechanika a optika" . "Chv\u00E1tal, Milo\u0161" . . . . "0447-6441" . . "Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode." . "325093" . . "P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)" . . . "Measurements and Theoretical Approximations of VA Characteristics MOSFETs" . . "54" . "\u0160ikula, Josef" . "4"^^ . "Sedl\u00E1kov\u00E1, Vlasta" . . . . "26220" . "Measurements and Theoretical Approximations of VA Characteristics MOSFETs"@en . . "4"^^ . "10" . . "RIV/00216305:26220/09:PU83429" . . . . "2"^^ . . . "[93D7FEB6C0A5]" .