"RIV/00216305:26220/09:PU82319!RIV10-MSM-26220___" . "Silicon Solar Cell, Non-destructive Testing, Electric model"@en . . "319624" . "P(GD102/09/H074), Z(MSM0021630503)" . . "Innovative electric model of n+p silicon solar cells"@en . . . . . "Mack\u016F, Robert" . . "WIP-Renewable Energies" . "\u0160karvada, Pavel" . "RIV/00216305:26220/09:PU82319" . . . "Hamburg" . "3"^^ . "Neuveden" . . "3"^^ . . . "26220" . "This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model wi"@en . "4"^^ . "Proceedings of 24rd European Photovoltaic Solar Energy Conference" . . "Innovative electric model of n+p silicon solar cells" . . . . . "Koktav\u00FD, Pavel" . . "3-936338-24-8" . "This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model wi" . "Innovative electric model of n+p silicon solar cells" . "Innovative electric model of n+p silicon solar cells"@en . . . "[6DE7106B2FC7]" . "2009-09-20+02:00"^^ .