"Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode."@cs . . "Brno" . . . "Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode."@en . . "IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS"@cs . "Electronic Devices and Systems EDS'09 IMAPS CS International Conference 2009" . . . "N\u00E1m. Republiky 15 Brno" . . "IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS" . . "[29497F745A7E]" . . "NOVPRESS s.r.o." . "Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode." . "2009-09-02+02:00"^^ . . . "IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS"@cs . "\u0160ikula, Josef" . . . "RIV/00216305:26220/09:PU81999" . . . . "4"^^ . . "318817" . "IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS"@en . "26220" . "VA characteristic, MOSFET, electron density, diffusion current, drift current"@en . "Sedl\u00E1kov\u00E1, Vlasta" . . "IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS"@en . . "RIV/00216305:26220/09:PU81999!RIV10-MSM-26220___" . "3"^^ . . "IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS" . "Chv\u00E1tal, Milo\u0161" . . "3"^^ . "P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)" . . . "978-80-214-3933-7" .