. . . "348316" . "VA characteristics, MOSFETs, electron density, drain current"@en . . "RIV/00216305:26220/09:PU81699!RIV10-MSM-26220___" . "Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode." . "Ing. Martin Slanina, Ph.D." . "Sborn\u00EDk p\u0159\u00EDsp\u011Bvk\u016F konference KR\u00C1L\u00CDKY 2009" . . . . . "VA CHARACTERISTICS OF N-CHANNEL CMOS TECHNOLOGY" . . "VA CHARACTERISTICS OF N-CHANNEL CMOS TECHNOLOGY" . . . "Sedl\u00E1kov\u00E1, Vlasta" . . "[142F66316106]" . . "Kr\u00E1l\u00EDky" . "4"^^ . . . "RIV/00216305:26220/09:PU81699" . . . . . "P(GD102/09/H074), Z(MSM0021630503)" . . "3"^^ . "2009-08-31+02:00"^^ . "Brno" . "26220" . "Majzner, Ji\u0159\u00ED" . "VA CHARACTERISTICS OF N-CHANNEL CMOS TECHNOLOGY"@en . "Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode."@en . "Chv\u00E1tal, Milo\u0161" . "3"^^ . "VA CHARACTERISTICS OF N-CHANNEL CMOS TECHNOLOGY"@en . . "978-80-214-3938-2" .