"\u0160ikula, Josef" . "Hl\u00E1vka, Jan" . "2008-10-20+02:00"^^ . "Tacano, Munecazu" . . . . "6"^^ . . . "399025" . "Helsinky" . . . . "Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics" . "Navarov\u00E1, Hana" . "4"^^ . "Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltage Ta and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changes of the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decreasing or increas" . "Neuveden" . "0-7908-0121-3" . "Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics"@en . . . "Sedl\u00E1kov\u00E1, Vlasta" . "Neuveden" . . . . . "Zedn\u00ED\u010Dek, Tom\u00E1\u0161" . "Z(MSM0021630503)" . . "RIV/00216305:26220/08:PU78583!RIV10-MSM-26220___" . "Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics" . "[C86CEEE34902]" . "CARTS EUROPE 2008" . . "10"^^ . "NbO capacitors, field crystalization"@en . "RIV/00216305:26220/08:PU78583" . "Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics"@en . "26220" . "Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltage Ta and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changes of the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decreasing or increas"@en . . .