"WIP-Renewable Energies" . "RIV/00216305:26220/08:PU76329!RIV10-MSM-26220___" . . "[66AADBD1F415]" . . . . . "P(GA102/06/1551), Z(MSM0021630503)" . . . "384717" . "Valencia, Spain" . "Koktav\u00FD, Pavel" . "Proceedings of 23rd European Photovoltaic Solar Energy Conference" . . . "\u0160karvada, Pavel" . . "2008-09-01+02:00"^^ . "3"^^ . . . "26220" . . "On the determination of silicon solar cell properties via capacitance characteristics" . "3"^^ . "On the determination of silicon solar cell properties via capacitance characteristics" . "Diffusion technology based PN junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions (hundreds of cm2) contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased PN junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown. The capacitance versus reverse voltage plots were measured using the %22Auto balancing bridge method%22, which proved to serve the purpose very well. Thus obtained capacitance versus reverse voltage characteristics provide information on the inhomogeneity nature resulting from local variations of the impurity concentration. Our measurement results have shown that valuable information on the junction, such as, the solar cell P-region acceptor concentration" . . "4"^^ . "On the determination of silicon solar cell properties via capacitance characteristics"@en . "RIV/00216305:26220/08:PU76329" . . "On the determination of silicon solar cell properties via capacitance characteristics"@en . "Defects, Capacitance, Silicon Solar Cell"@en . "Valencie" . . . "Diffusion technology based PN junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions (hundreds of cm2) contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased PN junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown. The capacitance versus reverse voltage plots were measured using the %22Auto balancing bridge method%22, which proved to serve the purpose very well. Thus obtained capacitance versus reverse voltage characteristics provide information on the inhomogeneity nature resulting from local variations of the impurity concentration. Our measurement results have shown that valuable information on the junction, such as, the solar cell P-region acceptor concentration"@en . "Mack\u016F, Robert" . . . "3-936338-24-8" . .