. "Noise Spectroscopy, Noise Spectral Density, Low Frequency Noise, Defects, Traps, Metal - Semiconductor Junction, Depleted Region, Relaxation Time, Generation - Recombination Noise, Material Ageing."@en . . "1"^^ . "RADIATION DETECTORS NOISE SPECTROSCOPY"@en . . "RADIATION DETECTORS NOISE SPECTROSCOPY"@en . . . "Z(MSM0021630503)" . . "RADIATION DETECTORS NOISE SPECTROSCOPY" . . . . . . "Andreev, Alexey" . . "RIV/00216305:26220/08:PU76146!RIV10-MSM-26220___" . . . . . "391346" . "Cadmium Telluride is a material of great importance in the fields of both fundamental research and technical applications, because of its structural, optical, electronic and photoelectronic properties. Today the main application of Cadmium Telluride is in high resolution detection of ?-rays and X-rays. The main advantage of radiation detectors manufactured on CdTe base is that they need no cooling and can operate at the room temperature and there is a more effective interaction of photons in CdTe than in either Si or Ge. The transport and noise characteristics of CdTe samples were studied. The measurements show that the bulk resistance of CdTe single crystals decreases very slowly when the external electric field is applied. n-type samples and p-type samples show different response on the temperature changes. These effects were analyzed. The noise measurements show that dominant noise at low frequencies is type of 1/f noise. At higher frequencies generation-recombination and thermal noise were appar" . "RADIATION DETECTORS NOISE SPECTROSCOPY" . . . "Cadmium Telluride is a material of great importance in the fields of both fundamental research and technical applications, because of its structural, optical, electronic and photoelectronic properties. Today the main application of Cadmium Telluride is in high resolution detection of ?-rays and X-rays. The main advantage of radiation detectors manufactured on CdTe base is that they need no cooling and can operate at the room temperature and there is a more effective interaction of photons in CdTe than in either Si or Ge. The transport and noise characteristics of CdTe samples were studied. The measurements show that the bulk resistance of CdTe single crystals decreases very slowly when the external electric field is applied. n-type samples and p-type samples show different response on the temperature changes. These effects were analyzed. The noise measurements show that dominant noise at low frequencies is type of 1/f noise. At higher frequencies generation-recombination and thermal noise were appar"@en . . "RIV/00216305:26220/08:PU76146" . . "Andreev, Alexey" . . "26220" . "[E2F7F820B03D]" . "1"^^ .