"Publikace pojedn\u00E1v\u00E1 o problematice fluktua\u010Dn\u00EDch jev\u016F p\u0159i transportu n\u00E1boje v polovodi\u010Dov\u00FDch materi\u00E1lech a sou\u010D\u00E1stk\u00E1ch a o aplikac\u00EDch \u0161umov\u00E9 spektroskopie pro odhad kvality a spolehlivosti pasivn\u00EDch i aktivn\u00EDch elektronick\u00FDch sou\u010D\u00E1stek"@cs . "RIV/00216305:26220/08:PU74378" . . . . "Fluktua\u010Dn\u00ED jevy v elektronick\u00FDch sou\u010D\u00E1stk\u00E1ch: tantalov\u00E9 kondenz\u00E1tory, tlustovrstvov\u00E9 odpory a heterostruktury FET" . . . . . "Fluktua\u010Dn\u00ED jevy v elektronick\u00FDch sou\u010D\u00E1stk\u00E1ch: tantalov\u00E9 kondenz\u00E1tory, tlustovrstvov\u00E9 odpory a heterostruktury FET"@cs . "1"^^ . . "368231" . "Z(MSM0021630503)" . "1"^^ . "[63DCF1B1354B]" . . "RIV/00216305:26220/08:PU74378!RIV10-MSM-26220___" . . "Fluktua\u010Dn\u00ED jevy v elektronick\u00FDch sou\u010D\u00E1stk\u00E1ch: tantalov\u00E9 kondenz\u00E1tory, tlustovrstvov\u00E9 odpory a heterostruktury FET"@cs . . "1/f noise, RTS noise, reliability, NDT, GaN, InGaAs, MOSFET"@en . . . . . . "26220" . "Publikace pojedn\u00E1v\u00E1 o problematice fluktua\u010Dn\u00EDch jev\u016F p\u0159i transportu n\u00E1boje v polovodi\u010Dov\u00FDch materi\u00E1lech a sou\u010D\u00E1stk\u00E1ch a o aplikac\u00EDch \u0161umov\u00E9 spektroskopie pro odhad kvality a spolehlivosti pasivn\u00EDch i aktivn\u00EDch elektronick\u00FDch sou\u010D\u00E1stek" . "Fluctuation phenomena in electronic devices: tantalum capacitors, thick film resistors and heterostructures FET"@en . "Pavelka, Jan" . . "Booklet deals with low-frequency noise in electronic materials and devices and and its use as a diagnostic tool for device characterisation. Noise spectroscopy is very sensitive technique for analysis of bulk and interface defects, determining quality and reliability of electronic devices. Fluctuation phenomena in wide range of passive and active devices are discussed, comprising noise in tantalum capacitors, thick film resistors and field effect transistors, based either on silicon, or novel III-V heterostructures, such as InGaAs/InAlAs or GaN/AlGaN."@en . "Fluktua\u010Dn\u00ED jevy v elektronick\u00FDch sou\u010D\u00E1stk\u00E1ch: tantalov\u00E9 kondenz\u00E1tory, tlustovrstvov\u00E9 odpory a heterostruktury FET" . . . "Fluctuation phenomena in electronic devices: tantalum capacitors, thick film resistors and heterostructures FET"@en .